Ag2Er2Te4
Ag2Er2Te4 is a stable semiconducting telluride compound investigated for its potential integration into phase-change memory technologies.
About Ag2Er2Te4
Ag2Er2Te4 is a semiconducting compound belonging to the class of phase-change memory materials. As a thermodynamically stable phase residing on the convex hull, it represents a robust candidate for structural investigations within the broader family of telluride-based chalcogenides.
This material is of significant interest for its potential utility in non-volatile memory applications. Its stable electronic configuration and structural characteristics make it a subject of ongoing study for developers seeking to optimize switching performance and data retention in next-generation storage technologies.
Key Properties
Cross-validated computational properties for Ag2Er2Te4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ag2Er2Te4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-421m (No. 113) | tetragonal | 0.89 | 0.0000 | -4.532 | 7.53 |
| P3m1 (No. 156) | trigonal | 1.12 | 0.0222 | -4.510 | 6.92 |
| P-421m (No. 113) | — | — | — | — | — |
| P-421m (No. 113) | — | — | — | — | — |
| — | — | — | — | — | 7.48 |
Applications
Where Ag2Er2Te4 is used.
Frequently Asked Questions
Common questions about Ag2Er2Te4, answered from cross-validated data.
What is Ag2Er2Te4?
Ag2Er2Te4 is a stable semiconducting telluride compound investigated for its potential integration into phase-change memory technologies.
What is Ag2Er2Te4 used for?
What is the band gap of Ag2Er2Te4?
Is Ag2Er2Te4 a metal, semiconductor, or insulator?
Is Ag2Er2Te4 thermodynamically stable?
What is the crystal structure of Ag2Er2Te4?
What is the density of Ag2Er2Te4?
How many polymorphs of Ag2Er2Te4 are known?
What elements does Ag2Er2Te4 contain?
Where does the data for Ag2Er2Te4 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse landscape of phase-change materials, Ag2Er2Te4 occupies a distinct niche compared to classic binary systems like GeTe or Sb2Te3. While many of its siblings are widely utilized for their rapid amorphous-to-crystalline transitions, Ag2Er2Te4 provides a unique structural alternative that complements the performance profiles of more common tellurides like AgSbTe2 or Ge2Sb2Te5.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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