Ag4S6Te2
Ag4S6Te2 is a thermodynamically stable semiconducting chalcogenide compound utilized in the development of phase-change memory technologies.
About Ag4S6Te2
Ag4S6Te2 is a complex ternary chalcogenide that functions as a semiconducting material within the phase-change memory family. Its position on the thermodynamic convex hull suggests robust stability, making it a subject of interest for researchers investigating reliable, long-term data storage solutions.
The material is characterized by its distinct electronic behavior, which is essential for the rapid, reversible switching between amorphous and crystalline states required in advanced memory architectures. Its structural diversity, evidenced by multiple reported configurations, highlights its potential utility in next-generation non-volatile memory technologies.
Key Properties
Cross-validated computational properties for Ag4S6Te2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ag4S6Te2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Cc (No. 9) | monoclinic | 1.30 | 0.0000 | -15.451 | 5.15 |
| Cc (No. 9) | — | — | — | — | — |
| — | — | — | — | — | 4.56 |
| — | — | — | — | — | 4.56 |
| — | — | — | — | — | 4.56 |
| — | — | — | — | — | 4.56 |
| — | — | — | — | — | 4.98 |
Applications
Where Ag4S6Te2 is used.
Frequently Asked Questions
Common questions about Ag4S6Te2, answered from cross-validated data.
What is Ag4S6Te2?
Ag4S6Te2 is a thermodynamically stable semiconducting chalcogenide compound utilized in the development of phase-change memory technologies.
What is Ag4S6Te2 used for?
What is the band gap of Ag4S6Te2?
Is Ag4S6Te2 a metal, semiconductor, or insulator?
Is Ag4S6Te2 thermodynamically stable?
What is the crystal structure of Ag4S6Te2?
What is the density of Ag4S6Te2?
How many polymorphs of Ag4S6Te2 are known?
What elements does Ag4S6Te2 contain?
Where does the data for Ag4S6Te2 come from?
How It Compares
Within the phase-change memory materials class.
Within the landscape of phase-change memory materials, Ag4S6Te2 occupies a unique niche compared to more traditional binary systems like GeTe or Ag2Te. While many siblings in this class rely on simpler stoichiometry to achieve switching, the inclusion of sulfur alongside tellurium in this compound offers a different approach to tuning the electronic and thermal properties necessary for high-performance memory devices.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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