Bi1Ge1Te2

Bi1Ge1Te2 is a semiconducting phase-change material with promising stability for use in next-generation electronic memory technologies.

Overview

About Bi1Ge1Te2

Bi1Ge1Te2 is a semiconducting ternary compound belonging to the class of phase-change memory materials. Its electronic properties and structural flexibility make it a subject of interest for advanced non-volatile memory applications where rapid switching between amorphous and crystalline states is required. As a near-hull material, it is considered highly likely to be synthesizable in a laboratory setting. Its existence within a rich landscape of reported structures underscores its versatility and potential utility in developing robust, high-performance electronic components.

At a glance

Key Properties

Cross-validated computational properties for Bi1Ge1Te2, aggregated across 3 databases.

Band Gap

0.50 eV
Range across DFT structures

Energy Above Hull

0.013 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

27
3 databases, 17 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for Bi1Ge1Te2, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
R-3m (No. 166)trigonal0.500.0132-33.4146.65
Pmm2 (No. 25)
Cmm2 (No. 35)
P4/mmm (No. 123)
P2/m (No. 10)
I-4m2 (No. 119)
P2/m (No. 10)
Fm-3m (No. 225)
P4/mmm (No. 123)
R-3m (No. 166)
C2/m (No. 12)
Pmmm (No. 47)
Uses

Applications

Where Bi1Ge1Te2 is used.

Non-volatile memory devicesPhase-change data storageNeuromorphic computing hardware
Reference

Frequently Asked Questions

Common questions about Bi1Ge1Te2, answered from cross-validated data.

What is Bi1Ge1Te2?

Bi1Ge1Te2 is a semiconducting phase-change material with promising stability for use in next-generation electronic memory technologies.

More questions
What is Bi1Ge1Te2 used for?
Bi1Ge1Te2 is used in non-volatile memory devices, phase-change data storage, and neuromorphic computing hardware.
What is the band gap of Bi1Ge1Te2?
Bi1Ge1Te2 has a DFT-computed band gap of 0.50 eV across 27 reported structures.
Is Bi1Ge1Te2 a metal, semiconductor, or insulator?
With a band gap up to 0.50 eV it is a semiconductor.
Is Bi1Ge1Te2 thermodynamically stable?
Bi1Ge1Te2 has a lowest energy above hull of 0.013 eV/atom (near hull (likely stable)).
What is the crystal structure of Bi1Ge1Te2?
The lowest-energy reported polymorph of Bi1Ge1Te2 is trigonal symmetry, space group R-3m (No. 166).
What is the density of Bi1Ge1Te2?
The computed density of the ground-state structure of Bi1Ge1Te2 is 6.65 g/cm³.
How many polymorphs of Bi1Ge1Te2 are known?
27 structures of Bi1Ge1Te2 are reported across 3 databases, spanning 17 distinct space groups.
What elements does Bi1Ge1Te2 contain?
Bi1Ge1Te2 contains Bi, Ge, and Te (3 elements).
Where does the data for Bi1Ge1Te2 come from?
Bi1Ge1Te2 data is cross-referenced from materials_project, aflow.
Comparison

How It Compares

Within the phase-change memory materials class.

Within the diverse family of phase-change materials, Bi1Ge1Te2 occupies a unique niche alongside established compounds like GeTe and Ge2Sb2Te5. While GeTe serves as a foundational benchmark for phase-change behavior, Bi1Ge1Te2 offers distinct structural characteristics that may provide alternative pathways for tuning thermal and electrical switching parameters in memory devices.

Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).

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