Br3CsSn
cesium tin tribromide · CsSnBr3
CsSnBr3 is a lead-free, semiconducting halide perovskite material valued for its thermodynamic stability and potential in next-generation solar energy harvesting.

About cesium tin tribromide
Cesium tin tribromide is a semiconducting halide perovskite that sits on the thermodynamic convex hull, indicating excellent structural stability. As a member of the tin-based perovskite family, it is a focal point for researchers aiming to develop lead-free alternatives for high-performance optoelectronic devices.
Its electronic character makes it highly suitable for light-harvesting applications where efficient charge transport is essential. The compound has been extensively characterized across multiple structural databases, reflecting its importance in the ongoing development of sustainable energy materials.
Key Properties
Cross-validated computational properties for cesium tin tribromide, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Br3CsSn, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pnma (No. 62) | orthorhombic | 0.97 | 0.0000 | -3.538 | 4.17 |
| Pm-3m (No. 221) | cubic | 0.60 | 0.0112 | -3.527 | 4.10 |
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| — | — | — | — | — | 3.59 |
Applications
Where cesium tin tribromide is used.
Frequently Asked Questions
Common questions about cesium tin tribromide, answered from cross-validated data.
What is Br3CsSn?
CsSnBr3 is a lead-free, semiconducting halide perovskite material valued for its thermodynamic stability and potential in next-generation solar energy harvesting.
What is Br3CsSn used for?
What is the band gap of Br3CsSn?
Is Br3CsSn a metal, semiconductor, or insulator?
Is Br3CsSn thermodynamically stable?
What is the crystal structure of Br3CsSn?
What is the density of Br3CsSn?
How many polymorphs of Br3CsSn are known?
What elements does Br3CsSn contain?
Where does the data for Br3CsSn come from?
How It Compares
Within the halide perovskite photovoltaics class.
Unlike the lead-based CsPbBr3, which is the industry standard for halide perovskites, CsSnBr3 offers a lead-free composition that addresses toxicity concerns while maintaining a similar perovskite architecture. Compared to its iodide counterpart CsSnI3, this bromide variant provides a distinct electronic profile that is critical for tuning the band structure in photovoltaic thin films.
Related Compounds
Other Halide Perovskite Photovoltaics in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- alexandria — Data from alexandria.
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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