Cu3In3Se8Si

Cu3In3Se8Si has a DFT band gap of 0.63 eV across 3 reported structures in 1 space group. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Cu3In3Se8Si, aggregated across 2 databases.

Band Gap

0.63 eV
Range across DFT structures

Energy Above Hull

0.014 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

3
2 databases, 1 space group
Reference

Frequently Asked Questions

Common questions about Cu3In3Se8Si, answered from cross-validated data.

What is the band gap of Cu3In3Se8Si?

Cu3In3Se8Si has a DFT-computed band gap of 0.63 eV across 3 reported structures.

More questions
Is Cu3In3Se8Si a metal, semiconductor, or insulator?
With a band gap up to 0.63 eV it is a semiconductor.
Is Cu3In3Se8Si thermodynamically stable?
Cu3In3Se8Si has a lowest energy above hull of 0.014 eV/atom (near hull (likely stable)).
How many polymorphs of Cu3In3Se8Si are known?
3 structures of Cu3In3Se8Si are reported across 2 databases, spanning 1 distinct space group.
What elements does Cu3In3Se8Si contain?
Cu3In3Se8Si contains Cu, In, Se, and Si (4 elements).
Where does the data for Cu3In3Se8Si come from?
Cu3In3Se8Si data is cross-referenced from latticegraph.
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Related Compounds

Other Chalcogenide Photovoltaic Absorbers in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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