Ge2Te5As2
Ge2Te5As2 is a stable semiconducting material used in the research and development of phase-change memory applications.
About Ge2Te5As2
Ge2Te5As2 is a complex semiconducting chalcogenide that exists as a thermodynamically stable phase. Its structural integrity and electronic properties make it a subject of interest for researchers studying the fundamental physics of phase-change memory materials.
This compound plays a critical role in the development of next-generation non-volatile memory devices. By leveraging its ability to transition between structural states, it serves as a functional component in high-speed, durable data storage solutions.
Key Properties
Cross-validated computational properties for Ge2Te5As2, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Ge2Te5As2, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-3m1 (No. 164) | trigonal | 0.41 | 0.0000 | -4.079 | 6.17 |
| P-3m1 (No. 164) | — | — | — | — | — |
| P-3m1 (No. 164) | Trigonal | — | — | — | 6.26 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 6.08 |
| P-3m1 (No. 164) | Trigonal | — | — | — | 6.19 |
Applications
Where Ge2Te5As2 is used.
Frequently Asked Questions
Common questions about Ge2Te5As2, answered from cross-validated data.
What is Ge2Te5As2?
Ge2Te5As2 is a stable semiconducting material used in the research and development of phase-change memory applications.
What is Ge2Te5As2 used for?
What is the band gap of Ge2Te5As2?
Is Ge2Te5As2 a metal, semiconductor, or insulator?
Is Ge2Te5As2 thermodynamically stable?
What is the crystal structure of Ge2Te5As2?
What is the density of Ge2Te5As2?
How many polymorphs of Ge2Te5As2 are known?
What elements does Ge2Te5As2 contain?
Where does the data for Ge2Te5As2 come from?
How It Compares
Within the phase-change memory materials class.
Within the broad family of phase-change materials, Ge2Te5As2 occupies a distinct niche compared to the industry-standard Ge2Sb2Te5. While Ge2Sb2Te5 is widely recognized for its rapid switching kinetics, Ge2Te5As2 offers a unique compositional profile that influences its stability and crystallization behavior, providing an alternative pathway for tuning memory device performance.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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