Ge6Te6

Ge6Te6 has a DFT band gap of 0.15–2.18 eV across 15 reported structures in 8 space groups. Cross-validated across 4 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Ge6Te6, aggregated across 4 databases.

Band Gap

0.15–2.18 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

15
4 databases, 8 space groups
Reference

Frequently Asked Questions

Common questions about Ge6Te6, answered from cross-validated data.

What is the band gap of Ge6Te6?

Ge6Te6 has a DFT-computed band gap of 0.15–2.18 eV across 15 reported structures.

More questions
Is Ge6Te6 a metal, semiconductor, or insulator?
With a band gap up to 2.18 eV it is a semiconductor.
Is Ge6Te6 thermodynamically stable?
Yes — Ge6Te6 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Ge6Te6 are known?
15 structures of Ge6Te6 are reported across 4 databases, spanning 8 distinct space groups.
What elements does Ge6Te6 contain?
Ge6Te6 contains Ge and Te (2 elements).
Where does the data for Ge6Te6 come from?
Ge6Te6 data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Phase-Change Memory Materials in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze Ge6Te6 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →