H4Al2O9Si2

H4Al2O9Si2 has a DFT band gap of 4.23–4.99 eV across 19 reported structures in 4 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for H4Al2O9Si2, aggregated across 3 databases.

Band Gap

4.23–4.99 eV
Range across DFT structures

Energy Above Hull

0.018 eV/atom
Best (lowest) across sources

Stability

Near hull (likely stable)
1 DFT source

Structures

19
3 databases, 4 space groups
Reference

Frequently Asked Questions

Common questions about H4Al2O9Si2, answered from cross-validated data.

What is the band gap of H4Al2O9Si2?

H4Al2O9Si2 has a DFT-computed band gap of 4.23–4.99 eV across 19 reported structures.

More questions
Is H4Al2O9Si2 a metal, semiconductor, or insulator?
With a wide band gap up to 4.99 eV it is an insulator / wide-band-gap material.
Is H4Al2O9Si2 thermodynamically stable?
H4Al2O9Si2 has a lowest energy above hull of 0.018 eV/atom (near hull (likely stable)).
How many polymorphs of H4Al2O9Si2 are known?
19 structures of H4Al2O9Si2 are reported across 3 databases, spanning 4 distinct space groups.
What elements does H4Al2O9Si2 contain?
H4Al2O9Si2 contains Al, H, O, and Si (4 elements).
Where does the data for H4Al2O9Si2 come from?
H4Al2O9Si2 data is cross-referenced from latticegraph.
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Related Compounds

Other Aluminosilicates and Zeolite Frameworks in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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