Hf1Ni1Sn1

Hf1Ni1Sn1 has a DFT band gap of 0.39 eV across 24 reported structures in 4 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for Hf1Ni1Sn1, aggregated across 3 databases.

Band Gap

0.39 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

24
3 databases, 4 space groups
Reference

Frequently Asked Questions

Common questions about Hf1Ni1Sn1, answered from cross-validated data.

What is the band gap of Hf1Ni1Sn1?

Hf1Ni1Sn1 has a DFT-computed band gap of 0.39 eV across 24 reported structures.

More questions
Is Hf1Ni1Sn1 a metal, semiconductor, or insulator?
With a band gap up to 0.39 eV it is a semiconductor.
Is Hf1Ni1Sn1 thermodynamically stable?
Yes — Hf1Ni1Sn1 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Hf1Ni1Sn1 are known?
24 structures of Hf1Ni1Sn1 are reported across 3 databases, spanning 4 distinct space groups.
What elements does Hf1Ni1Sn1 contain?
Hf1Ni1Sn1 contains Hf, Ni, and Sn (3 elements).
Where does the data for Hf1Ni1Sn1 come from?
Hf1Ni1Sn1 data is cross-referenced from latticegraph.
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Related Compounds

Other Half-Heusler Thermoelectrics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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