HfMgO3

HfMgO3 has a DFT band gap of 1.17 eV across 5 reported structures in 2 space groups. Cross-validated across 3 computational databases.

HfMgO
At a glance

Key Properties

Cross-validated computational properties for HfMgO3, aggregated across 3 databases.

Band Gap

1.17 eV
Range across DFT structures

Energy Above Hull

0.590 eV/atom
Best (lowest) across sources

Stability

Above hull
2 DFT sources

Structures

5
3 databases, 2 space groups
Reference

Frequently Asked Questions

Common questions about HfMgO3, answered from cross-validated data.

What is the band gap of HfMgO3?

HfMgO3 has a DFT-computed band gap of 1.17 eV across 5 reported structures.

More questions
Is HfMgO3 a metal, semiconductor, or insulator?
With a band gap up to 1.17 eV it is a semiconductor.
Is HfMgO3 thermodynamically stable?
HfMgO3 has a lowest energy above hull of 0.590 eV/atom (above hull).
How many polymorphs of HfMgO3 are known?
5 structures of HfMgO3 are reported across 3 databases, spanning 2 distinct space groups.
What elements does HfMgO3 contain?
HfMgO3 contains Hf, Mg, and O (3 elements).
Where does the data for HfMgO3 come from?
HfMgO3 data is cross-referenced from latticegraph.
Reading

Related Research

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze HfMgO3 in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →