In2HgTe4
In2HgTe4 is a stable semiconducting material used in the development of phase-change memory technologies.
About In2HgTe4
In2HgTe4 is a semiconducting compound that occupies a distinct position within the family of phase-change memory materials. As a thermodynamically stable phase, it maintains structural integrity, which is a critical requirement for reliable switching applications in advanced electronic devices.
Its utility stems from the ability to transition between structural states, a hallmark of its class. By leveraging its semiconducting nature, researchers investigate this material for next-generation non-volatile memory architectures where stability and performance are paramount.
Key Properties
Cross-validated computational properties for In2HgTe4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for In2HgTe4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I-4 (No. 82) | tetragonal | 0.53 | 0.0000 | -28.433 | 6.15 |
| I-4m2 (No. 119) | tetragonal | 0.00 | 0.2126 | -28.220 | 6.86 |
| I-4 (No. 82) | — | — | — | — | — |
| I-4 (No. 82) | Tetragonal | — | — | — | 5.97 |
| I-4 (No. 82) | Tetragonal | — | — | — | 6.23 |
| I-4 (No. 82) | Tetragonal | — | — | — | 6.16 |
Applications
Where In2HgTe4 is used.
Frequently Asked Questions
Common questions about In2HgTe4, answered from cross-validated data.
What is In2HgTe4?
In2HgTe4 is a stable semiconducting material used in the development of phase-change memory technologies.
What is In2HgTe4 used for?
What is the band gap of In2HgTe4?
Is In2HgTe4 a metal, semiconductor, or insulator?
Is In2HgTe4 thermodynamically stable?
What is the crystal structure of In2HgTe4?
What is the density of In2HgTe4?
How many polymorphs of In2HgTe4 are known?
What elements does In2HgTe4 contain?
Where does the data for In2HgTe4 come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse group of phase-change materials, In2HgTe4 serves as a specialized alternative to more common binary and ternary systems like GeTe or Sb2Te3. While many of its siblings are heavily optimized for high-speed switching, In2HgTe4 offers a unique structural configuration that provides a different set of thermodynamic characteristics for targeted memory device applications.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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