In5CuTe8
In5CuTe8 is a stable, semiconducting chalcogenide compound primarily investigated for its potential utility in phase-change memory applications.
About In5CuTe8
In5CuTe8 is a semiconducting compound within the phase-change memory material family. Its position on the convex hull indicates it is a thermodynamically stable phase, making it a reliable candidate for research into non-volatile data storage technologies.
This material is characterized by its complex structural arrangements, with multiple reported configurations across databases. Its electronic properties and stability make it an intriguing subject for developing next-generation memory devices that require rapid, reversible transitions between structural states.
Key Properties
Cross-validated computational properties for In5CuTe8, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for In5CuTe8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| C2 (No. 5) | monoclinic | 0.14 | 0.0000 | -23.796 | 5.62 |
| C2 (No. 5) | — | — | — | — | — |
| C2 (No. 5) | Monoclinic | — | — | — | 5.59 |
| C2 (No. 5) | Monoclinic | — | — | — | 5.41 |
| C2 (No. 5) | Monoclinic | — | — | — | 5.66 |
Applications
Where In5CuTe8 is used.
Frequently Asked Questions
Common questions about In5CuTe8, answered from cross-validated data.
What is In5CuTe8?
In5CuTe8 is a stable, semiconducting chalcogenide compound primarily investigated for its potential utility in phase-change memory applications.
What is In5CuTe8 used for?
What is the band gap of In5CuTe8?
Is In5CuTe8 a metal, semiconductor, or insulator?
Is In5CuTe8 thermodynamically stable?
What is the crystal structure of In5CuTe8?
What is the density of In5CuTe8?
How many polymorphs of In5CuTe8 are known?
What elements does In5CuTe8 contain?
Where does the data for In5CuTe8 come from?
How It Compares
Within the phase-change memory materials class.
Compared to widely utilized phase-change standards like Ge2Sb2Te5 or Sb2Te3, In5CuTe8 offers a distinct compositional profile that broadens the available design space for memory applications. While materials like GeTe are frequently cited for their rapid switching speeds, In5CuTe8 provides a stable alternative that contributes to the ongoing evolution of chalcogenide-based electronics.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
- mpaloe — Data from mpaloe.
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