InN

Indium nitride · InN

Indium nitride is a stable III-V semiconductor material widely studied for its potential in high-performance electronic and optical devices.

Crystal structure of InN (hexagonal, P63mc (No. 186))
Ground-state structure · Materials Project
Overview

About Indium nitride

Indium nitride is a prominent member of the III-V semiconductor family, recognized for its stable thermodynamic profile and distinct electronic characteristics. As a material that sits firmly on the convex hull, it serves as a critical component in the ongoing evolution of advanced semiconductor physics.

Its utility is underscored by an extensive body of research, with hundreds of reported structures across major databases. This broad structural knowledge base highlights its importance in the development of next-generation electronic and optoelectronic technologies that require precise band engineering.

At a glance

Key Properties

Cross-validated computational properties for Indium nitride, aggregated across 5 databases.

Band Gap

1.15 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
3 DFT sources

Structures

236
5 databases, 42 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of InN. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: high

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

3
jarvis, materials_project, nomad

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for InN, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P63mc (No. 186)hexagonal0.000.0000-15.9716.84
F-43m (No. 216)cubic0.000.0133-15.9586.82
Fm-3m (No. 225)cubic0.000.2108-15.7618.19
Fm-3m (No. 225)1.15
P1 (No. 1)Triclinic7.01
F-43m (No. 216)
Pm (No. 6)Monoclinic6.11
Pm (No. 6)Monoclinic7.51
P1 (No. 1)Triclinic5.89
C2/m (No. 12)Monoclinic3.41
Amm2 (No. 38)Orthorhombic7.01
C2/c (No. 15)Monoclinic8.03
Uses

Applications

Where Indium nitride is used.

High-speed transistorsOptoelectronic devicesSolar cellsPhotodetectors
Reference

Frequently Asked Questions

Common questions about Indium nitride, answered from cross-validated data.

What is InN?

Indium nitride is a stable III-V semiconductor material widely studied for its potential in high-performance electronic and optical devices.

More questions
What is InN used for?
Indium nitride (InN) is used in high-speed transistors, optoelectronic devices, solar cells, and photodetectors.
What is the band gap of InN?
Indium nitride (InN) has a DFT-computed band gap of 1.15 eV across 236 reported structures.
Is InN a metal, semiconductor, or insulator?
With a band gap up to 1.15 eV it is a semiconductor.
Is InN thermodynamically stable?
Yes — Indium nitride (InN) sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of InN?
The lowest-energy reported polymorph of Indium nitride (InN) is hexagonal symmetry, space group P63mc (No. 186).
What is the density of InN?
The computed density of the ground-state structure of Indium nitride (InN) is 6.84 g/cm³.
How many polymorphs of InN are known?
236 structures of InN are reported across 5 databases, spanning 42 distinct space groups.
What elements does InN contain?
Indium nitride (InN) contains In and N (2 elements).
Where does the data for InN come from?
InN data is cross-referenced from materials_project, nomad, mpaloe, jarvis, cod.
Comparison

How It Compares

Within the iii-v semiconductors class.

Within the III-V semiconductor class, indium nitride offers a unique electronic profile that complements more traditional materials like gallium nitride. While gallium nitride is widely utilized for its robust performance in power electronics, indium nitride provides distinct advantages in mobility and spectral range, making it a specialized choice for high-frequency applications where other siblings like aluminum phosphide or aluminum antimonide may not be as suitable.

Explore

Related Compounds

Other III-V Semiconductors in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
  • mpaloe — Data from mpaloe.
  • jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).

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