InO

InO is an indium-based oxide semiconductor that is typically found to be thermodynamically unstable compared to other oxides in the same chemical family.

Crystal structure of InO (hexagonal, P-6m2 (No. 187))
Ground-state structure · Materials Project
Overview

About InO

InO is a semiconducting oxide that belongs to the broader class of wide-bandgap oxide semiconductors. While it shares elemental components with more common indium oxides, it represents a distinct stoichiometry that has been the subject of extensive structural investigation across materials databases.

Due to its position above the thermodynamic hull, this compound is generally considered unstable under standard conditions. Its study is primarily driven by the need to map the complex phase space of indium-oxygen systems and understand the fundamental electronic behavior of sub-oxides in this semiconductor family.

At a glance

Key Properties

Cross-validated computational properties for InO, aggregated across 3 databases.

Band Gap

0.40 eV
Range across DFT structures

Energy Above Hull

0.226 eV/atom
Best (lowest) across sources

Stability

Above hull
1 DFT source

Structures

231
3 databases, 33 space groups
Validation

Cross-Source DFT Agreement

How well independent DFT databases agree on the thermodynamics of InO. Tight agreement means computed properties can be trusted without re-running calculations.

Agreement Score

1.00 / 1.00
Trust tier: medium

Hull Spread

0.000 eV
EAH spread across sources

Sources Compared

1
materials_project

Space Group Consensus

All match
Crystallography

Reported Structures

Lowest-energy structures reported for InO, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P-6m2 (No. 187)hexagonal0.400.2263-5.2892.65
P63mc (No. 186)hexagonal0.000.3106-5.2056.05
C2/m (No. 12)Monoclinic8.85
Cmc21 (No. 36)Orthorhombic6.05
Cmc21 (No. 36)Orthorhombic6.84
P63/mmc (No. 194)Hexagonal5.64
P63/mmc (No. 194)Hexagonal6.27
P63/mmc (No. 194)Hexagonal8.88
P21/m (No. 11)Monoclinic4.69
Pmmn (No. 59)Orthorhombic5.04
P-1 (No. 2)Triclinic6.75
P-1 (No. 2)Triclinic4.89
Reference

Frequently Asked Questions

Common questions about InO, answered from cross-validated data.

What is InO?

InO is an indium-based oxide semiconductor that is typically found to be thermodynamically unstable compared to other oxides in the same chemical family.

More questions
What is the band gap of InO?
InO has a DFT-computed band gap of 0.40 eV across 231 reported structures.
Is InO a metal, semiconductor, or insulator?
With a band gap up to 0.40 eV it is a semiconductor.
Is InO thermodynamically stable?
InO has a lowest energy above hull of 0.226 eV/atom (above hull).
What is the crystal structure of InO?
The lowest-energy reported polymorph of InO is hexagonal symmetry, space group P-6m2 (No. 187).
What is the density of InO?
The computed density of the ground-state structure of InO is 2.65 g/cm³.
How many polymorphs of InO are known?
231 structures of InO are reported across 3 databases, spanning 33 distinct space groups.
What elements does InO contain?
InO contains In and O (2 elements).
Where does the data for InO come from?
InO data is cross-referenced from materials_project, mpaloe, cod.
Comparison

How It Compares

Within the wide-bandgap oxide semiconductors class.

In contrast to highly stable and widely utilized wide-bandgap semiconductors like ZnO or the more common In2O3, InO is characterized by its relative thermodynamic instability. While its siblings often serve as robust transparent conductive oxides or dielectric layers, InO remains a more elusive, theoretically intriguing member of the indium-oxygen system.

Explore

Related Compounds

Other Wide-Bandgap Oxide Semiconductors in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • mpaloe — Data from mpaloe.
  • cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).

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