InTe2Tl
InTe2Tl is a stable semiconducting material utilized in the development of phase-change memory technologies.
About InTe2Tl
InTe2Tl is a semiconducting compound that occupies a stable position on the thermodynamic convex hull. Its structural versatility is highlighted by its presence in multiple reported configurations, making it a subject of interest for researchers investigating phase-change phenomena.
As a member of the phase-change memory materials class, this compound is engineered to transition between distinct structural states. These transitions are leveraged in advanced non-volatile memory devices to store and retrieve digital information with high efficiency.
Key Properties
Cross-validated computational properties for InTe2Tl, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for InTe2Tl, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| I4/mcm (No. 140) | tetragonal | 0.54 | 0.0000 | -3.425 | 6.98 |
| I4/mcm (No. 140) | — | — | — | — | — |
| — | — | — | — | — | 6.93 |
| — | — | — | — | — | 6.85 |
| — | — | — | — | — | 7.61 |
| — | — | — | — | — | 7.18 |
| — | — | — | — | — | 7.18 |
| — | — | — | — | — | 7.18 |
| — | — | — | — | — | 6.99 |
Applications
Where InTe2Tl is used.
Frequently Asked Questions
Common questions about InTe2Tl, answered from cross-validated data.
What is InTe2Tl?
InTe2Tl is a stable semiconducting material utilized in the development of phase-change memory technologies.
What is InTe2Tl used for?
What is the band gap of InTe2Tl?
Is InTe2Tl a metal, semiconductor, or insulator?
Is InTe2Tl thermodynamically stable?
What is the crystal structure of InTe2Tl?
What is the density of InTe2Tl?
How many polymorphs of InTe2Tl are known?
What elements does InTe2Tl contain?
Where does the data for InTe2Tl come from?
How It Compares
Within the phase-change memory materials class.
Within the diverse family of telluride-based phase-change materials, InTe2Tl offers a unique ternary composition compared to binary standards like GeTe or Sb2Te3. While many members of this class are optimized for specific switching speeds or thermal stability, InTe2Tl provides a distinct structural profile that complements the well-established behavior of complex systems such as Ge2Sb2Te5.
Related Compounds
Other Phase-Change Memory Materials in the database.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- nomad — Data from NOMAD. Cite: Draxl & Scheffler, J. Phys. Mater. 2, 036001 (2019).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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