LaFeAsO

LaFeAsO has a DFT band gap of 1.29 eV across 5 reported structures in 3 space groups. Cross-validated across 2 computational databases.

At a glance

Key Properties

Cross-validated computational properties for LaFeAsO, aggregated across 2 databases.

Band Gap

1.29 eV
Range across DFT structures

Energy Above Hull

0.173 eV/atom
Best (lowest) across sources

Stability

Above hull
1 DFT source

Structures

5
2 databases, 3 space groups
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting LaFeAsO.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about LaFeAsO, answered from cross-validated data.

What is the band gap of LaFeAsO?

LaFeAsO has a DFT-computed band gap of 1.29 eV across 5 reported structures.

More questions
Is LaFeAsO a metal, semiconductor, or insulator?
With a band gap up to 1.29 eV it is a semiconductor.
Is LaFeAsO thermodynamically stable?
LaFeAsO has a lowest energy above hull of 0.173 eV/atom (above hull).
How many polymorphs of LaFeAsO are known?
5 structures of LaFeAsO are reported across 2 databases, spanning 3 distinct space groups.
How is LaFeAsO synthesized?
Literature-reported routes for LaFeAsO include solid state (4 procedures documented).
What elements does LaFeAsO contain?
LaFeAsO contains As, Fe, La, and O (4 elements).
Where does the data for LaFeAsO come from?
LaFeAsO data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Iron-Based Superconductors in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

Analyze LaFeAsO in the Lattice Graph platform

Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.

Explore the Platform →