SiOs

SiOs is a thermodynamically stable, semiconducting silicon-based compound utilized in the research and development of advanced anode materials for energy storage.

Crystal structure of SiOs (cubic, P213 (No. 198))
Ground-state structure · Materials Project
Overview

About SiOs

SiOs is a silicon-based inorganic compound that functions as a semiconducting material. Its position on the convex hull indicates high thermodynamic stability, making it a robust candidate for advanced material applications where structural integrity is paramount. The compound is part of a broad family of silicon-based materials currently being investigated for their potential to enhance energy storage systems.

Given its electronic character and stability, SiOs is categorized within the class of silicon anode materials. Its existence across numerous reported structures highlights its significance in materials science research, providing a stable framework for exploring the electrochemical performance of silicon-heavy compounds in next-generation battery architectures.

At a glance

Key Properties

Cross-validated computational properties for SiOs, aggregated across 4 databases.

Band Gap

0.51 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
2 DFT sources

Structures

216
4 databases, 28 space groups
Crystallography

Reported Structures

Lowest-energy structures reported for SiOs, ranked by energy above hull.

Space GroupCrystal SystemBand Gap (eV)E above hull (eV/atom)E/atom (eV)Density (g/cm³)
P213 (No. 198)cubic0.510.0000-31.27213.39
Pm-3m (No. 221)cubic0.000.0271-31.24514.30
P-1 (No. 2)Triclinic15.13
Pm-3m (No. 221)
P1 (No. 1)Triclinic9.88
P-1 (No. 2)Triclinic7.85
Cm (No. 8)Monoclinic11.00
P-1 (No. 2)Triclinic9.31
P-1 (No. 2)Triclinic12.53
P1 (No. 1)Triclinic10.11
P-1 (No. 2)Triclinic10.01
P-1 (No. 2)Triclinic9.39
Uses

Applications

Where SiOs is used.

Battery anode researchSemiconductor device developmentMaterials science research
Reference

Frequently Asked Questions

Common questions about SiOs, answered from cross-validated data.

What is SiOs?

SiOs is a thermodynamically stable, semiconducting silicon-based compound utilized in the research and development of advanced anode materials for energy storage.

More questions
What is SiOs used for?
SiOs is used in battery anode research, semiconductor device development, and materials science research.
What is the band gap of SiOs?
SiOs has a DFT-computed band gap of 0.51 eV across 216 reported structures.
Is SiOs a metal, semiconductor, or insulator?
With a band gap up to 0.51 eV it is a semiconductor.
Is SiOs thermodynamically stable?
Yes — SiOs sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
What is the crystal structure of SiOs?
The lowest-energy reported polymorph of SiOs is cubic symmetry, space group P213 (No. 198).
What is the density of SiOs?
The computed density of the ground-state structure of SiOs is 13.39 g/cm³.
How many polymorphs of SiOs are known?
216 structures of SiOs are reported across 4 databases, spanning 28 distinct space groups.
What elements does SiOs contain?
SiOs contains Os and Si (2 elements).
Where does the data for SiOs come from?
SiOs data is cross-referenced from materials_project, mpaloe, jarvis.
Comparison

How It Compares

Within the silicon anode materials class.

Within the diverse class of silicon anode materials, SiOs distinguishes itself through its specific thermodynamic stability compared to more common or reactive counterparts like Si or Mg2Si. While materials such as MoSi2 are often studied for their refractory nature, SiOs offers a unique semiconducting profile that complements the metallic or semi-metallic behavior found in other silicides like FeSi or BaSi2.

Explore

Related Compounds

Other Silicon Anode Materials in the database.

Data sources & attribution
  • materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
  • mpaloe — Data from mpaloe.
  • jarvis — Data from JARVIS (NIST). Cite: Choudhary et al., npj Comp. Mater. 6, 173 (2020).

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