TiNiSn

TiNiSn has a DFT band gap of 0.45 eV across 11 reported structures in 2 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for TiNiSn, aggregated across 3 databases.

Band Gap

0.45 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

11
3 databases, 2 space groups
Synthesis

Synthesis Routes

Literature-extracted synthesis procedures targeting TiNiSn.

Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Solid State
Procedure available · ceder_solid_state
Reference

Frequently Asked Questions

Common questions about TiNiSn, answered from cross-validated data.

What is the band gap of TiNiSn?

TiNiSn has a DFT-computed band gap of 0.45 eV across 11 reported structures.

More questions
Is TiNiSn a metal, semiconductor, or insulator?
With a band gap up to 0.45 eV it is a semiconductor.
Is TiNiSn thermodynamically stable?
Yes — TiNiSn sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of TiNiSn are known?
11 structures of TiNiSn are reported across 3 databases, spanning 2 distinct space groups.
How is TiNiSn synthesized?
Literature-reported routes for TiNiSn include solid state (7 procedures documented).
What elements does TiNiSn contain?
TiNiSn contains Ni, Sn, and Ti (3 elements).
Where does the data for TiNiSn come from?
TiNiSn data is cross-referenced from latticegraph.
Explore

Related Compounds

Other Half-Heusler Thermoelectrics in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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