Ga4O6
Ga4O6 has a DFT band gap of 0.47–2.40 eV across 22 reported structures in 6 space groups. Cross-validated across 3 computational databases.
At a glance
Key Properties
Cross-validated computational properties for Ga4O6, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
0.47–2.40 eV
Range across DFT structures
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
0.000 eV/atom
Best (lowest) across sources
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
On hull (stable)
1 DFT source
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
22
3 databases, 6 space groups
Reference
Frequently Asked Questions
Common questions about Ga4O6, answered from cross-validated data.
What is the band gap of Ga4O6?
Ga4O6 has a DFT-computed band gap of 0.47–2.40 eV across 22 reported structures.
More questions
Is Ga4O6 a metal, semiconductor, or insulator?
With a band gap up to 2.40 eV it is a semiconductor.
Is Ga4O6 thermodynamically stable?
Yes — Ga4O6 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of Ga4O6 are known?
22 structures of Ga4O6 are reported across 3 databases, spanning 6 distinct space groups.
What elements does Ga4O6 contain?
Ga4O6 contains Ga and O (2 elements).
Where does the data for Ga4O6 come from?
Ga4O6 data is cross-referenced from latticegraph.
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Related Compounds
Other Wide-Bandgap Oxide Semiconductors in the database.
Data sources & attribution
- latticegraph — Lattice Graph Materials Intelligence Platform
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