O2Sn2

O2Sn2 has a DFT band gap of 0.41–1.64 eV across 34 reported structures in 13 space groups. Cross-validated across 3 computational databases.

At a glance

Key Properties

Cross-validated computational properties for O2Sn2, aggregated across 3 databases.

Band Gap

0.41–1.64 eV
Range across DFT structures

Energy Above Hull

0.000 eV/atom
Best (lowest) across sources

Stability

On hull (stable)
1 DFT source

Structures

34
3 databases, 13 space groups
Reference

Frequently Asked Questions

Common questions about O2Sn2, answered from cross-validated data.

What is the band gap of O2Sn2?

O2Sn2 has a DFT-computed band gap of 0.41–1.64 eV across 34 reported structures.

More questions
Is O2Sn2 a metal, semiconductor, or insulator?
With a band gap up to 1.64 eV it is a semiconductor.
Is O2Sn2 thermodynamically stable?
Yes — O2Sn2 sits on the convex hull (energy above hull 0 eV/atom), i.e. on hull (stable).
How many polymorphs of O2Sn2 are known?
34 structures of O2Sn2 are reported across 3 databases, spanning 13 distinct space groups.
What elements does O2Sn2 contain?
O2Sn2 contains O and Sn (2 elements).
Where does the data for O2Sn2 come from?
O2Sn2 data is cross-referenced from latticegraph.
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Related Compounds

Other Conversion Oxide Anodes in the database.

Data sources & attribution
  • latticegraph — Lattice Graph Materials Intelligence Platform

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