A portfolio of patent assets, ranked by what they&#x27;re worth and how proven they are.

Aluminum nitride thermal liner for through-glass vias in advanced packaging

Wurtzite AlN via-wall liner converts a through-glass via from a thermal bottleneck into an active heat path, cutting through-via thermal resistance by 50% or more.

Clear IP pathAlN

PFAS-destruction selector with triple-verified fluoride mass balance

Routes short-chain PFAS to selective ion exchange and destruction, with three-method fluoride closure verification no existing treatment system provides.

Market $1-5Bmunicipal waterDetails →

Heat-flux-map-registered zone-modulated thermal interface material for AI accelerator packaging

A single continuous TIM body with filler concentration tuned to the die heat-flux map, reducing hotspot peak temperatures by 10–25 K without increasing total filler mass.

Market $10B+AI accelerator packagingDetails →

Integrated all-solid-state battery cell stack — ordered multilayer with endpoint qualification

Single ASSB architecture uniting an anode-side oxide interlayer, buffered halide/sulfide separator, and ordered cathode in one endpoint-qualified stack.

Market $10B+solid-state batteriesDetails →

Market $10B+green hydrogenDetails →

Chromium-phosphide catalyst for low-cost, carbon-support-free hydrogen production

Single-phase CrP electrode with near-optimal hydrogen binding — a PGM-free HER cathode roughly 17,000x cheaper in raw metal than platinum.

Clear IP pathCrP

Clear IP pathMg2SiO4 / YAlO3 / CaMgSiO4 / LiMgPO4

Radiation-hardened crystalline oxide, silicate, and phosphate dielectric materials for space electronics

A database-backed ladder of forsterite, YAlO3, and related crystalline oxides delivers approximately 2x total-ionizing-dose retention versus standard SiO2/Si3N4/Al2O3 interlayer dielectrics, with clean freedom-to-operate across the composition set.

Market $1-5Brad-hard space electronicsDetails →

PFAS-free dielectric immersion-cooling system for AI accelerators and data centers

Closed-loop coolant system with verified dielectric retention, corrosion-inhibitor package, and 500-hour reuse spec — no fluorinated fluids required.

Market $5B+AI/data-center thermal managementDetails →

Integrated glass-core advanced-packaging substrate stack

Single ordered glass-core article spanning thermal liner, Cu barrier, dielectric, cap, and passive layers — each layer teardown-verifiable and qualified against 16 package reliability endpoints.

Zone-modulated thermal interface material article with heat-flux-registered filler distribution

A standalone pre-formed TIM sheet or film with spatially varying filler concentration registered to a die heat-flux map, enabling merchant TIM suppliers to sell directly to OSATs independent of the package builder.

Market $1-5Bmerchant TIM supplyDetails →

★ Flagship3-engine validated

Li2HfO3 hafnate anode-side interlayer for lithium-garnet solid-state batteries

CTE-matched hafnium lithium oxide interlayer stabilizing the lithium-metal/garnet interface, targeting CCD ≥1.0 mA/cm² and interfacial resistance ≤30 Ω·cm².

Clear IP pathLi2HfO3

Market $5B+solid-state batteriesDetails →

PFAS-free semiconductor fluid purification and PAT-gated release platform

Fluid-agnostic multi-module purification with sensor-gated release converts any PFAS-free candidate into electronics-grade product.

Market $10B+semiconductor manufacturingDetails →

★ Flagship3-engine validated

Glass-core packaging stack with aluminum borate liner, tungsten boride barrier, and chlorine-retaining RDL dielectric

Integrated glass-core substrate stack combining a conformal AlBO3 liner, a crystalline WB2 copper diffusion barrier, and a retained-chlorine amorphous dielectric for advanced semiconductor packaging.

Defined carve-outAlBO3 / WB2 / AlOxCly

Clear IP pathB2W / WBx (x~1.5-2.5)

Tungsten boride copper diffusion barrier on alumina-borate liner for glass-core vias

Refractory tungsten boride Cu barrier on an alumina-borate adhesion liner blocks copper diffusion at sub-TaN film thickness, freeing via geometric budget in high-aspect-ratio through-glass vias.

Market $5B+semiconductor packagingDetails →

Clear IP path11B-As (cBAs)

Isotope-enriched cubic boron arsenide particulate thermal interface material

Bimodal boron-11-enriched cubic boron arsenide particles in a polysiloxane matrix achieve composite thermal conductivity of 30–46 W/m·K for premium AI accelerator and HBM thermal interfaces.

Market $5B+premium AI accelerator TIMDetails →

Clear IP pathLi3InCl6 | Li3PO4 | Li6PS5Cl

Oxide-buffered halide/sulfide trilayer for solid-state batteries

Li3InCl6/oxide-buffer/argyrodite three-layer stack with ≤25% interfacial resistance growth over 500 h — suppressing the cross-diffusion that degrades direct halide/sulfide contacts.

Market $5B+solid-state batteriesDetails →

Automated PFAS treatment controller with tamper-evident audit ledger and discharge interlock

Hardware-interlocked controller that applies the PFAS treatment selection rules, logs results on a hash-chained tamper-evident ledger, and physically blocks discharge below the verified closure threshold.

Market $1-5Bindustrial process controlDetails →

Integrated high-power package with matched TIM-1, TIM-2, and lid-attach thermal stack

One ordered package architecture combining zone-modulated TIM-1, low-bond-line TIM-2, and inorganic lid-attach layers, covering the full thermal path for AI accelerators and HBM modules.

Market $10B+AI accelerator packagingDetails →

★ Flagship4-engine validated

Cation-ordered Li2MgMn3O8 spinel cathode for high-voltage solid-state batteries

Ordered Mg-Mn spinel cathode with all-Mn4+ redox, operating 2.0–4.95 V with suppressed oxygen evolution — no matching prior art identified in the patent literature.

Clear IP pathLi2MgMn3O8

Market $2-5Bsolid-state batteriesDetails →

Barium hafnate Ruddlesden-Popper high-permittivity dielectric for MIM capacitors

Layered perovskite Ba2HfO4 delivers permittivity ~53.5 with a wide bandgap for leakage-free, high-density MIM capacitors in DRAM and advanced packaging.

★ FlagshipSimulation-validated

Strontium tetraborate (SrB4O7) wide-bandgap dielectric for advanced semiconductor packaging

The only oxide dielectric reaching static permittivity ≥10 at a ~7 eV bandgap, purpose-built for redistribution-layer and through-glass-via applications.

Defined carve-outSrB4O7

Market $1-5Badvanced semiconductor packagingDetails →

★ Flagship4-engine validated

Activator-doped rare-earth orthophosphate (REPO4) scintillator host for radiation detection

First-disclosed orthophosphate scintillator host class: dense, non-hygroscopic xenotime-type REPO4 crystals doped with Ce, Tb, Eu, or Pr for gamma and X-ray detection.

Clear IP pathLuPO4 / HoPO4 / TbPO4 / TmPO4

★ Flagship4-engine validated

Multi-engine phonon-consensus screening method for rare-earth ternary silicide superconductor candidates

Four-engine phonon stability consensus plus patent whitespace prescreening converts a broad known genus into a defensible, evidence-anchored selection method.

★ FlagshipSimulation-validated

Rare-earth disilicate dielectric platform for glass-core and redistribution-layer applications

Y2Si2O7 and Lu2Si2O7 dielectrics measured at static permittivity 9–10 with >600°C thermal stability, filling performance gaps where organic dielectrics and silica jointly fall short.

Clear IP pathY2Si2O7

Market $1-5Badvanced semiconductor packagingDetails →

Market $5B+green hydrogenDetails →

Ordered iron-cobalt phosphide cathode for PGM-free hydrogen electrolysis

Single-phase FeCoP with the tightest dual-model hydrogen-binding agreement in the family, offering a PGM-free alternative to carbon-supported phosphides.

Clear IP pathFe0.5Co0.5P

Market $5B+HBM4/DRAM memoryDetails →

Calcium hafnate and calcium zirconate high-permittivity dielectrics for advanced memory packaging

Distorted-perovskite CaHfO3 and CaZrO3 are cross-validated stable high-k dielectric materials with a confirmed clear freedom-to-operate position for MIM capacitor device applications in HBM4 and DRAM packaging.

Clear IP pathCaHfO3

High-atomic-number hafnate, tantalate, and oxyfluoride scintillator hosts for gamma detection

Novel-stoichiometry Ca2Hf7O16 and Rb2Hf3OF12 scintillator hosts deliver exceptional gamma-ray stopping power via hafnium and tantalum's high atomic numbers.

Clear IP pathCa2Hf7O16

Market $1-2Badvanced semiconductor packagingDetails →

Yttrium aluminoborate (YAl3B4O12) huntite-phase dielectric for high-bandwidth-memory packaging

Huntite-structured YAB delivers uniquely high glass-transition temperature (>800°C) within the permittivity 5–9 range needed for HBM redistribution-layer dielectrics.

Clear IP pathYAl3B4O12

Market $2-5Bgreen hydrogenDetails →

Tungsten diphosphide catalyst for hydrogen evolution via CVT or molten-salt synthesis

Beta-phase WP2 prepared by chemical vapor transport or flux routes delivers a durable, support-free PGM-free HER cathode with refractory-grade stability.

Clear IP pathWP2

Clear IP pathMoP / CoP / Co2P / FeP / WP

Transition-metal phosphide cathode catalyst for green hydrogen electrolyzers

MoP, CoP, Co2P, FeP, and WP earth-abundant phosphide catalysts integrated into membrane electrode assemblies offer near-optimal hydrogen evolution activity at raw-material costs roughly 17,000x lower than platinum, with a clear freedom-to-operate position for PEM, AEM, and alkaline electrolyzer cathodes.

Market $5B+green hydrogenDetails →

Closed-loop nitrogen-blanketed vapor-cleaning apparatus for PFAS-free solvents

Oxygen- and flammability-interlocked enclosed vapor cleaner enables moderate-flammability PFAS-free fluids with 90%+ solvent recovery and 50+ reuse cycles.

Market $1-3Bprecision parts cleaningDetails →

Method of detecting ionizing radiation using rare-earth orthophosphate, borate, aluminate, or hafnate scintillators

A use-method patent covering gamma, X-ray, neutron, and charged-particle detection with any of the disclosed rare-earth or hafnate scintillator host families.

Market $1-5BHBM RDLDetails →

Capped aluminum fluoride low-k dielectric nanolaminate for redistribution layers

Wide-bandgap AlF3 RDL dielectric deposited as a capped nanolaminate suppresses fluorine migration and delivers low dielectric loss for HBM and RF packaging applications.

Clear IP pathAlF3

Market $1-2Bcritical-minerals recoveryDetails →

Sterically hindered catecholate resin for selective germanium recovery from zinc-refinery residue

3,5-di-tert-butylcatechol resin achieves Ge/Zn separation factors of 500–5000 at pH 1–3, enabling direct germanium extraction from acidic zinc-smelter waste streams.

Clear IP pathDTBC-PS-DVB

Market $2-5Bgreen hydrogenDetails →

Tungsten monophosphide catalyst for hydrogen evolution — dual-facet HER activity

Single-phase WP provides two independently-confirmed active crystal faces for hydrogen evolution, rounding out a PGM-free phosphide cathode platform.

Defined carve-outWP

PFAS-free fume suppressant for hexavalent-chromium plating baths

Oxidation-resistant alpha-hydrogen-free sulfonate package suppresses chrome-plating mist to match fluorotelomer performance with near-zero organofluorine content.

Market $1-3Bmetal finishing / hard chrome platingDetails →

Radiation-detection device integrating a novel scintillator host with a photodetector for PET, CT, and particle physics

Detector system combining the disclosed scintillator hosts with PMT, SiPM, or APD photodetectors, covering PET/SPECT rings, X-ray CT arrays, calorimeter cells, and well-logging tools.

Market $5B+medical imagingDetails →

Ruddlesden-Popper barium hafnate high-k dielectric for package-integrated MIM capacitors

Ba3Hf2O7 layered hafnate delivers dielectric constant ~32 with a 3.7 eV bandgap for embedded MIM and decoupling capacitors, occupying an uncrowded IP lane distinct from HfO2 gate dielectrics.

Clear IP pathBa3Hf2O7

Clear IP pathh-BN + AlN (epoxy/vitrimer matrix)

Low-bond-line aligned hexagonal boron nitride and aluminum nitride TIM with pump-out resistance

Spacer-controlled 25–50 µm bond-line TIM with aligned ceramic fillers and a dynamic crosslinker delivers under 5% thermal resistance drift after 1,000 thermal cycles, versus ~18% for incumbent phase-change materials.

Market $5B+cold-plate AI accelerator TIM-2Details →

Li2HfO3 hafnate cathode coating for sulfide solid-state electrolytes

Hafnium-only lithium oxide ALD coating (5–100 nm, 270–330 °C) on high-voltage cathode particles in direct contact with argyrodite sulfide electrolytes.

Defined carve-outLi2HfO3

Method of producing hydrogen using a support-free phosphide cathode

Electrolyzer operation method covering acid, alkaline, and neutral electrolytes with a support-free transition-metal phosphide cathode at commercial current densities.

Market $10B+green hydrogenDetails →

Market $1-5Bsemiconductor logic/memoryDetails →

Calcium hafnate (CaHfO3) high-permittivity perovskite gate dielectric

Phonon-confirmed alkaline-earth hafnate with permittivity ~31.8 and 5.16 eV bandgap, offering ~1.6x capacitance density over HfO2 for MOS and gate-stack applications.

Clear IP pathCaHfO3

Clear IP pathCrP / Cr(1-x)MxP

Chromium phosphide catalyst for noble-metal-free hydrogen evolution

CrP and cobalt- or nickel-doped variants on nitrogen-doped carbon deliver near-optimal hydrogen adsorption free energy (~-0.09 eV), enabling low-cost electrolyzer cathodes without platinum.

Market $1-5Bgreen hydrogenDetails →

Double-perovskite barium scandium tantalate high-k dielectric for package MIM capacitors

Ordered Ba2ScTaO6 delivers dielectric constant ~47 with cross-engine validated stability, providing a high-capacitance-density MIM option in an IP lane distinct from hafnium-oxide families.

Clear IP pathBa2ScTaO6

Ordered fabrication method for integrated glass-core advanced-packaging substrates

A process claim covering the ordered deposition sequence — thermal liner, Cu barrier, gradient sublayer, copper fill, cap, dielectric, and high-k passive — for manufacturing the integrated glass-core package stack.

Market $5B+semiconductor packaging fabDetails →

Clear IP path10B-N / 11B-N (c-BN)

Isotope-enriched cubic boron nitride particulate filler for electrically insulating thermal interfaces

Single-isotope (10B or 11B) enriched cubic boron nitride particles are electrically insulating wide-bandgap fillers with measured thermal conductivity up to ~1,650 W/m·K, requiring no dielectric shell in package thermal interface applications.

Market $1-2Bpremium dielectric-isolating TIMDetails →

Clear IP pathLi5AlO4 / LiAlO2

Graded Li5AlO4/LiAlO2 bilayer anode-side interlayer for garnet solid-state batteries

Dual-region graded aluminate bilayer — garnet-facing primer plus lithium-metal-facing cap — delivering CCD ≥0.8 mA/cm² and interfacial resistance ≤30 Ω·cm².

Market $5B+solid-state batteriesDetails →

Market $5B+semiconductor packagingDetails →

Wide-bandgap oxide ceramic dielectric stack for advanced semiconductor packaging and radiation-hard electronics

Named hull-stable oxides — spinel, garnet, phosphate, and silicate ceramics with 5–8 eV bandgaps — serve dual-use as packaging dielectrics and radiation-tolerant layers for space electronics.

Clear IP pathMgAl2O4

Lithium aluminate anode interlayer for solid-state batteries with dual CO2-sorbent function

Li5AlO4 film between a lithium-conducting electrolyte and a lithium anode suppresses dendrite formation, while the same material captures CO2 at intermediate temperatures, enabling dual-use solid-state battery architectures.

Clear IP pathLi5AlO4

Clear IP pathV2O5-P2O5-GeO2 (+ rutile GeO2 filler)

Lead-free vanadium-phosphate-germanate glass-binder TIM and lid-attach for glass-core packaging

A V2O5-P2O5-GeO2 inorganic glass binder with rutile germanium dioxide filler reflowing at 270–310°C provides a pump-out-immune, CTE-matched bondline for glass-core advanced packaging.

Market $5B+glass-core advanced packagingDetails →

Market $3-5Bsolid-state batteriesDetails →

Single-phase Li5AlO4 aluminate anode-side interlayer for garnet solid-state batteries

Manufacturable single-phase lithium aluminate interlayer (≥60 mol%) with anode-side positional asymmetry, distinguished from incidental sintering-aid residues.

Clear IP pathLi5AlO4

Clear IP pathAlBO3/BaWO4/LiBO2/BO4P

Bandgap-graded borate and oxynitride multilayer dielectric stack for sub-2-micron packaging

A sequenced AlBO3/BaWO4/LiBO2/borophosphate dielectric ladder with increasing bandgap away from conductors suppresses carrier injection, enabling sub-2-micron redistribution-layer pitch in glass-core packaging.

Market $5B+non-Be-fab environmentsDetails →

Magnesium silicon nitride particulate thermal interface material — beryllium-free architecture

Discrete surface-treated MgSiN2 particles in a polymer matrix deliver a fabrication-compatible, non-beryllium nitride filler with zero patent-corpus footprint in the discrete-particulate packaging architecture.

Clear IP pathMgSiN2

Clear IP pathLi3InCl6 | Li3PO4/LiNbO3/LiTaO3 (0.2-3 um) | argyrodite

Process for assembling a buffer-protected halide/sulfide trilayer

Manufacturing method for the protected halide/sulfide stack using a 0.2–3 µm oxide buffer sublayer, validated by a ≤25% interfacial resistance growth endpoint over 500 h.

Market $5-10Bsolid-state batteriesDetails →

Lithium indium chloride halide superionic conductor for solid-state batteries

Li3InCl6 achieves a measured ionic conductivity of ~2 mS/cm at room temperature with a wider electrochemical window and lower moisture sensitivity than sulfide electrolytes, enabling cathode-side halide solid electrolyte layers.

Clear IP pathLi3InCl6

Clear IP pathTmBiO3 / YBiO3 / ScBiO3

Bismuth rare-earth sesquioxide high-permittivity filler for package-integrated capacitors

ScBiO3, YBiO3, and TmBiO3 particles with total dielectric constant 37–53 are a previously unpatented high-permittivity filler genus, four-engine phonon-stable, for embedded capacitor and heat-spreading applications in advanced packages.

Market $1-2Bpackage-integrated passivesDetails →

Clear IP pathMo-doped Li7P3S11

Molybdenum-modified Li7P3S11 sulfide electrolyte with enhanced ionic conductivity

Mo-modified thio-LISICON sulfide reaching ~4.8×10⁻³ S/cm at room temperature — 2–3× the conductivity of the undoped parent compound.

Market $2-5Bsolid-state batteriesDetails →

Market $1-5Bsilicon photonicsDetails →

Potassium niobate thin-film electro-optic Mach-Zehnder modulator for silicon photonics

KNbO3 on MgO or silicon nitride buffer achieves Vpi times L below 0.59 V-cm at 82 GHz, outperforming thin-film lithium niobate and lithium tantalate in the modulation-efficiency figure of merit for datacom applications.

Defined carve-outKNbO3

Ruddlesden-Popper hafnate high-permittivity dual-function filler for embedded capacitors

Ba2HfO4 and related layered hafnate particles with total dielectric constant ~53 serve simultaneously as heat-spreading and high-permittivity fillers adjacent to embedded capacitors in advanced packages.

Clear IP pathNa3-xMxPS4 (M=Ca,Sr,Mg,Zn)

Dry-film divalent-doped Na3PS4 electrolyte system for sodium solid-state batteries

Solvent-free dry-calendered sodium thiophosphate with Ca/Sr/Mg/Zn doping and a sodium-metal stabilization layer — outside existing trivalent/tetravalent electrolyte patent families.

Market $2-5Bsodium solid-state batteriesDetails →

Process for forming a heat-flux-registered zone-modulated TIM bondline

A manufacturing method that maps die heat flux to a spatially varied filler-placement profile, then deposits the TIM by multi-zone stencil, jet, or lamination with mass-conserved filler inventory, forming the zone-modulated bondline in a conventional package assembly line.

Market $5B+packaging manufacturingDetails →

Clear IP pathLi5AlO4 / Li2HfO3

Process for forming an aluminate or hafnate anode-side interlayer on a garnet electrolyte

Post-densification deposition and lithiation process producing a Li5AlO4 or Li2HfO3 anode-side interlayer (≥40 mol%) on garnet, with critical current density ≥0.5 mA/cm².

Market $3-5Bsolid-state batteriesDetails →

Ruddlesden-Popper and perovskite hafnate high-permittivity dielectrics for HBM4 and DRAM capacitors

Ba2HfO4 and related hafnate compositions deliver computed permittivity approximately 2.4x that of standard HfO2 and 5x that of Al2O3, targeting MIM capacitor and gate dielectric applications in HBM4 and next-generation DRAM.

Market $10B+HBM4/DRAM memoryDetails →

Market $1-5Badvanced packaging RDLDetails →

Barium silicon oxynitride (Ba3Si6N4O9) halogen-free redistribution-layer dielectric

Phonon-confirmed oxynitride with 4.48 eV bandgap and low predicted loss tangent, deposited by PECVD for halogen-free RDL interconnect dielectric stacks.

Clear IP pathBa3Si6N4O9

Multifunctional glass-core semiconductor package integrating barrier, dielectric ladder, high-k MIM, and thermal management

A single glass-core package architecture combines a copper diffusion barrier, bandgap-graded dielectric stack, high-permittivity MIM capacitors, and a high-conductivity thermal interface layer to meet a defined thermal and reliability operating envelope for AI and HBM applications.

Clear IP pathM(a)M'(b)F(c) (genus)

Wide-gap crystalline metal-fluoride genus for low-loss superconducting-qubit dielectric layers

A computationally selected family of phonon-stable, ultra-low optical dielectric fluorides that replaces lossy amorphous oxides in superconducting qubit capacitors.

Market $1-2Bsuperconducting quantum computingDetails →

Reproducible screening process combining multi-engine phonon consensus, fail-safe patent whitespace check, and proxy superconducting temperature triage

Claimed screening process integrates four-engine stability consensus with a fail-safe patent prescreen to reliably identify superconductor and heavy-fermion candidates.

Market $1-5Bmaterials informaticsDetails →

Clear IP pathNa3AlF6 / MgF2 / K2SiF6 / LiSrAlF6 / LiCaAlF6 / LiYbAlF6 (lead anchors)

31 novel wide-gap crystalline fluorides for superconducting-qubit dielectric applications

Provenance-anchored enumeration of 31 previously unpatented fluoride compounds, each verified by computed dielectric and phonon stability properties for qubit dielectric use.

Market $1-2Bsuperconducting quantum computingDetails →

Clear IP pathRE-T-Si (method-selected)

Rare-earth silicide superconducting interconnect, Josephson junction, and resonator device article

Cryogenic device article using a screening-validated RE-T-Si silicide layer as a superconducting interconnect, junction electrode, or resonator.

Market $1-2Bsuperconducting quantum computingDetails →

Sodium hexafluoroaluminate (cryolite) as an ultra-low-dielectric crystalline layer for superconducting qubits

Na3AlF6 offers the lowest optical dielectric constant among network-solid fluoride candidates, enabling maximum reduction of participation-ratio loss in qubit capacitors.

Clear IP pathNa3AlF6

Market $1-2Bsuperconducting quantum computingDetails →

Quaternary lithium calcium aluminum fluoride dielectric for superconducting-qubit junction passivation

LiCaAlF6 has the widest bandgap and greatest phonon-stability margin of the fluoride candidates, making it the preferred crystalline passivation layer at Josephson junctions.

Clear IP pathLiCaAlF6

Universal chelating-resin platform for recovering critical minerals from industrial process streams

A single crosslinked resin with interchangeable binding groups selectively recovers germanium, antimony, tin, vanadium, molybdenum, tungsten, and six other critical oxocations from zinc, copper, and Bayer streams.

Market $1-5Bcritical-minerals recoveryDetails →

Market $5B+co-packaged opticsDetails →

Strained KNbO3 thin-film electro-optic modulator for datacenter co-packaged optics

Strained orthorhombic KNbO3 on MgO achieves a drive voltage-length product of 0.36-0.59 V·cm at 70+ GHz bandwidth, roughly 4-6x lower than thin-film lithium niobate, enabling lower-power co-packaged optical transceivers.

Clear IP pathKNbO3

Clear IP pathNdAlO3 / PrAlO3 / ErAlO3

Rare-earth aluminate perovskite (RE-AlO3) scintillator host for medical imaging and particle physics

NdAlO3 and PrAlO3 perovskite scintillator hosts offer densities of 6.7-7.7 g/cm3 in an IP-clear lane distinct from established YAP, LuAP, and garnet scintillator materials.

Gallium recovery platform for alumina refinery Bayer-process liquor

Three independently licensable sorbent designs — pyridyl-amidoxime lead, bishydroxamate foam, and ion-imprinted polymer — recover gallium from high-alkalinity Bayer liquor with confirmed Ga/Al selectivity.

Market $1-3Bcritical-minerals recoveryDetails →

Integrated co-packaged optics, radiation-hardened photonic module, and HBM4 capacitor stack systems

Multi-family system claims integrate the electro-optic modulator, radiation-hardened substrate, high-permittivity MIM capacitor, and copper electrofill technologies into co-packaged optical modules at 1.6-3.2 Tb/s, radiation-hardened photonic packages, and HBM4 memory stacks.

Market $10B+co-packaged opticsDetails →

Market $0.5-1Bradiation detectionDetails →

Rare-earth borate (REBO3) scintillator host for X-ray and UV-activator detector systems

LuBO3 and related rare-earth borates combine high density (~6.83 g/cm3) and a wide bandgap (~5.23 eV) with a clear patent landscape for UV-emitting scintillator applications.

Clear IP pathLuBO3

Clear IP pathNa3AlF6 / K2SiF6 / LiSrAlF6 / LiCaAlF6 / LiYbAlF6 (hardened subset)

High-confidence fluoride subset combining lowest optical dielectric constant and greatest phonon stability for qubit dielectrics

A narrowed five-member subset of the fluoride genus selected for the strongest combined dielectric and dynamical-stability margins, representing the preferred first-to-manufacture species.

Market $1-2Bsuperconducting quantum computingDetails →

Clear IP pathSiO2-B2O3-Al2O3-BaO (low-alkali)

Low-alkali barium borosilicate aluminosilicate glass for glass-core package substrates

A low-alkali (≤1 mol%) barium borosilicate aluminosilicate glass core with Tg 720–800 °C, CTE 3–9 ppm/K, and loss tangent below 0.005 at 10–40 GHz for AI and HBM advanced packaging.

Market $1-5Bglass-core substratesDetails →

Defined carve-outLi6PS5Cl

Unified solid-state lithium-ion conductor platform covering garnet, NASICON, halide, and thiophosphate electrolytes

A single interlayer Markush (LiNbO3, LiAlF4, LiF-rich, Al2O3) applied across four solid-electrolyte families mitigates interfacial failure without altering bulk ionic conductivity.

Defined carve-outCa2(Fe,Co,Mn)2O5

Mn-Co co-doped calcium ferrite oxygen carrier for chemical-looping with cement co-production

Doped brownmillerite carrier sustains redox cycling while routing captured CO2 to carbonate industrial slag or fly ash into a low-carbon hydraulic binder.

Market $1-5Bcarbon captureDetails →

Clear IP pathEr3GaS6 / Y3GaS6

Rare-earth gallium sulfide piezoelectric and acoustic device applications

Lead-free polar RE3GaS6 chalcogenide enables high-temperature piezoelectric resonators, MEMS sensors, and SAW/FBAR filters with a clean freedom-to-operate position.

Market $1-3Bacoustic RF filtersDetails →

Clear IP pathZrTi2O6 (Ti_x Zr_y O_z)

Titanium-zirconium mixed oxide sorbent for PFAS removal from water

Crystalline Ti-Zr binary oxide captures PFAS including short-chain species via inner-sphere ligand exchange, with Pourbaix stability across drinking-water pH ranges.

Market $1-5Bwater treatmentDetails →

Superconducting qubit device with crystalline fluoride dielectric layer at the capacitor or junction interface

A transmon or Josephson-junction qubit in which a genus-member crystalline fluoride replaces amorphous oxide at the shunt capacitor or junction passivation, reducing two-level-system dielectric loss.

Market $1-2Bsuperconducting quantum computingDetails →

n=1 barium hafnate high-k dielectric for high-capacitance MIM applications

Ba2HfO4 offers a computed dielectric constant of ~53 — the highest in the barium hafnate series — as an alternative MIM capacitor dielectric when maximum capacitance density is required.

Chloride-free deep-eutectic-solvent process for lithium-ion battery cathode recycling

A zwitterionic glycine-betaine / organic-acid / ascorbic-acid solvent system leaches Li then Ni-Co-Mn in sequence from cathode black mass, eliminating chloride corrosion and supporting EU recycled-content requirements.

Market $1-5Blithium-ion battery recyclingDetails →

Integrated chemical-looping combustion process with downstream CO2 mineralization to cementitious products

Single-loop process captures CO2 from industrial combustion and converts alkaline solid waste into a supplementary cementitious material — replacing two separate operations.

Market $1-5Bcarbon captureDetails →

Defined carve-outLiTaO3 / KTaO3 / LiNbO3 / PMN-PT

Lithium tantalate, potassium tantalate, and relaxor electro-optic modulator stack alternatives

A family of cross-validated thin-film electro-optic materials — including LiTaO3, KTaO3, and PMN-PT — broadens the modulator platform across drive-voltage and bandwidth targets for co-packaged optics and WDM interconnects.

Market $5B+integrated photonicsDetails →

Defined carve-outC16H33-P(+)(CH3)2-(CH2)3-SO3(-)

Phosphonium sulfobetaine fume suppressant for hexavalent-chromium plating baths

Structurally distinct phosphonium-center zwitterion reduces chrome bath mist without ammonium sulfobetaines, providing an independent claimable alternative to prior art.

Market $0.5-2Bmetal finishing / hard chrome platingDetails →

Method of reducing two-level-system dielectric loss in superconducting qubits using crystalline fluoride layers

A deposition and operating method — select a low-dielectric-constant, phonon-stable fluoride, deposit it on a superconducting electrode, and operate at millikelvin — to suppress soft-mode loss channels that limit qubit coherence.

Market $1-2Bsuperconducting quantum computingDetails →

Market $1-2Bpackage-integrated passivesDetails →

Rare-earth scandate wide-bandgap high-k dielectric for low-leakage package MIM capacitors

DyScO3 and GdScO3 perovskite scandates offer wide bandgaps (up to 4.5 eV) and bench-validated availability as low-leakage high-k dielectrics integrated into advanced packaging.

Clear IP pathDyScO3

Defined carve-outLiNi0.8Mn0.1Al0.1O2

Cobalt-free cathode platform for lithium-ion batteries: layered NMA, LFMP polyanion, and lithium-manganese silicate

Three cobalt-free active-material chemistries (NMA layered oxide, iron-manganese phosphate, and lithium-manganese silicate) with a shared oxide-coating Markush deliver >180 mAh/g capacity without primary cobalt.

Market $1-5Blithium-ion batteriesDetails →

Market $5B+HBM/DRAM memoryDetails →

High-permittivity columbite and perovskite capacitor dielectrics for HBM and DRAM memory stacks

MgNb2O6 and BaCeO3 thin films (permittivity 15–30) enable higher-density vertical capacitors in next-generation HBM4 and DRAM stacked-die architectures versus dense HfO2.

Clear IP pathMgNb2O6

Market $1-2Brad-hard space electronicsDetails →

Erbium oxyorthosilicate radiation-hardened interlayer dielectric for space and defense ICs

Er2SiO5 and related rare-earth oxyorthosilicates achieve approximately 4x greater radiation hardness than Lu2SiO5 in non-scintillator device configurations, filling a gap unaddressed by any in-force patent.

Clear IP pathEr2SiO5

Market $0.5-1Badvanced packaging RDLDetails →

Strontium yttrium aluminate (Sr2Y2Al4O15) halogen-free redistribution-layer dielectric

Phonon-confirmed alkaline-earth/rare-earth aluminate with 4.13 eV bandgap as a second independent halogen-free RDL dielectric option on copper interconnects.

Clear IP pathSr2Y2Al4O15

Clear IP pathRE-T-Si (method-selected)

Rare-earth silicide qubit substrate and integrated cryogenic quantum computing system

Quantum-device article and full cryogenic system integrating a screening-validated RE-T-Si silicide as qubit substrate, electrode, or coupler.

Market $5B+quantum computingDetails →

Database-driven method for selecting low-loss crystalline fluoride dielectrics for superconducting qubits

A zero-new-simulation screening method that queries computed dielectric constant, bandgap, and phonon stability simultaneously to identify candidate qubit dielectric materials from existing materials databases.

Market $1-2Bsuperconducting quantum computingDetails →

Bifunctional silane adhesion promoters for glass-to-copper bonding in glass-core packages

A family of glass-reactive and copper-chelating silane primers — led by 1,2,3-triazole-silane and imidazolidine-thione-silane — maintain glass-Cu adhesion through thermal cycling and damp-heat stress.

Market $1-3Bglass-core metallizationDetails →

Integrated flowsheet platform combining critical-mineral recovery, battery recycling, and advanced packaging

System-level claims covering a germanium-antimony-gallium recovery cascade, a magnet-recycling separation train, a battery-recycling closed loop, and a glass-core packaging dielectric stack — all from a unified technology portfolio.

Market $1-5Bcritical-minerals recoveryDetails →

Market $2-5Bsemiconductor packagingDetails →

Tiled boron arsenide heat-spreader plate for advanced semiconductor packaging

Multi-crystal BAs mosaic plates (thermal conductivity ~1,000–1,300 W/m/K) manage extreme heat loads in AI accelerators and power electronics without the cost of large monolithic diamond.

Defined carve-outBAs

Market $1-5Bthin-film photovoltaicsDetails →

Strontium zirconium sulfide thin-film photovoltaic absorber

SrZrS3 chalcoperovskite delivers a 1.3-1.5 eV bandgap that is 0.3-0.5 eV wider than CIGS, with no indium or gallium, and material costs estimated 3-5x lower than copper indium selenide incumbents.

Defined carve-outSrZrS3

Market $0.5-1Brad-hard electronicsDetails →

Yttrium aluminate perovskite (YAlO3) dielectric for radiation-hard and power electronics

Phonon-confirmed rare-earth aluminate perovskite with >4 eV bandgap suited for radiation-hard substrates, GaN epitaxy, and halogen-free RDL dielectric applications.

Clear IP pathYAlO3

Clear IP pathSrB4O7 / Al5BO9 / Ba2Mg(BO3)2

Wide-bandgap borate and aluminoborate insulating liner alternatives for glass-core vias

Al5BO9, SrB4O7 (bandgap ~7.3 eV), and Ba2Mg(BO3)2 are cross-engine validated wide-bandgap insulating liner options for glass-core via walls, broadening coverage beyond the alumina-borate lead.

Market $0.5-1Bglass-core linerDetails →

Market $0.5-2BRDL/BEOL reliabilityDetails →

Self-aligned ruthenium cap on copper interconnects for electromigration lifetime extension

A self-aligned Ru or NiMoP cap deposited on exposed copper in through-glass vias and redistribution layers interrupts surface electromigration pathways and suppresses corrosion under bias.

Clear IP pathRu

Defined carve-outYBO3 / LaBO3

Rare-earth orthoborate (YBO3 / LaBO3) higher-permittivity dielectric for packaging RDL

Orthoborate compositions delivering static permittivity up to 18.9 with a wide bandgap, extending the borate dielectric platform toward higher-density embedded passives.

Market $1-2Badvanced semiconductor packagingDetails →

Market $1-2Bgreen hydrogenDetails →

Vanadium monophosphide catalyst for earth-abundant hydrogen evolution

Ground-state VP delivers near-optimal hydrogen binding on the (110) surface, offering a low-cost, support-free alternative to precious-metal cathodes.

Clear IP pathVP

Defined carve-outHf(1-x)ZrxNiSn / NbFeSb

Half-Heusler intermetallic thermoelectric module for high-temperature waste-heat recovery

HfNiSn/ZrNiSn n-leg half-Heusler modules operating above 600 K deliver approximately 2x the temperature-integrated electrical power output of standard Bi2Te3/PbTe segmented couples, using earth-abundant, tellurium-free materials.

Market $1-3Bwaste-heat recoveryDetails →

Market $1-2Bsemiconductor logic/memoryDetails →

Lithium hafnate (Li2HfO3) high-permittivity, low-loss dielectric

Phonon-confirmed alkali hafnate with the highest aggregated permittivity (~36.5) and lowest predicted loss tangent among the disclosed oxide dielectrics.

Clear IP pathLi2HfO3

Market $1-5BtransducersDetails →

Erbium gallochalcogenide lead-free piezoelectric for transducers and sensors

Heavy rare-earth Er3GaS6 delivers a 46% higher piezoelectric coefficient than the yttrium analog and a laser-damage threshold far above AgGaS2, enabling lead-free acoustic transducers and pyroelectric sensors.

Defined carve-outEr3GaS6

Temperature-activated dynamic-covalent TIM matrix for warpage-sensitive and unclamped assemblies

A vitrimer polymer network achieving conformal interfacial contact at clamping pressures as low as 0.05 MPa via bond-exchange stress relaxation, enabling reliable TIM application in warpage-sensitive stacked HBM and co-packaged optics assemblies.

Market $1-3Bstacked HBMDetails →

Clear IP pathLi2(Hf,Zr)O3 ladder

Multi-sublayer Li hafnate/zirconate oxide interlayer ladder for garnet solid-state batteries

Stacked or graded anode-side interlayer combining Li5AlO4, LiAlO2, Li2HfO3, and Li2ZrO3 sublayers — extending design-around coverage beyond the single-oxide interlayer families.

Thioglycolate leach process for selective antimony recovery from copper smelter byproducts

A controlled pH/redox window (pH 3–7, –0.30 to +0.15 V) using thio-carboxylate lixiviants separates Sb(III) from arsenic without the hazardous off-gases of alkaline-sulfide processes.

Market $0.5-2Bcritical-minerals recoveryDetails →

Market $1-2Bgreen hydrogenDetails →

Sealed-tube and CVT synthesis process for phase-pure chromium phosphide

Defined thermal synthesis route — sealed ampoule or chemical vapor transport — yields single-phase CrP for use as a support-free hydrogen-evolution cathode.

Clear IP pathCrP

Defined carve-outMgTa2O6 / SrB4O7 / YAl3B4O12

Trirutile niobate, polar borate, and brownmillerite ceramics for mm-wave filters and solid oxide fuel cells

MgTa2O6, SrB4O7, and YAl3B4O12 monolithic ceramics form a validated platform for 5G/6G millimeter-wave dielectric resonators and filters, with additional brownmillerite Ba2In2O5 covering proton-conducting solid oxide fuel cell electrolyte applications.

Market $1-3Bmm-wave/5G filtersDetails →

Defined carve-out(TiO2)x(ZrO2)(1-x)

Titanium-zirconium binary oxide and doped iron oxide sorbents for PFAS water treatment

Low-leach TiZr mixed-oxide and cation-substituted iron oxide sorbents remove PFAS from water across a wide pH range and integrate with the short-chain-triggered treatment selector for verified discharge.

Market $1-5Bwater treatmentDetails →

In-situ glass-ceramic conversion process for enhanced inorganic TIM and lid-attach bondlines

Depositing a vanadium-phosphate-germanate or bismuth-silicoborate glass binder then partially crystallizing it in place at 305–350°C yields a glass-ceramic bondline with thermal conductivity at least 30% above the as-deposited glass.

Market $0.5-1Bglass-core packagingDetails →

Market $0.5-2Bcritical-minerals recoveryDetails →

Process for converting recovered gallium into electronic-grade zinc gallate (ZnGa2O4) spinel

Ties gallium recovery economics to a spec-qualified ZnGa2O4 product (>95 wt% phase purity), bridging the gap between refinery byproduct and electronic-ceramic buyer acceptance.

Clear IP pathZnGa2O4

Market $1-3Bwaste-heat recoveryDetails →

Hafnium-nickel-tin half-Heusler thermoelectric for mid-temperature waste-heat recovery

HfNiSn and its Hf-Zr-Ti solid solutions deliver zT of 0.8–1.2 when nanostructured, making them practical n-type thermoelectric legs for automotive exhaust and RTG applications.

Defined carve-outHfNiSn

Market $1-5Bsemiconductor gate/interlayer dielectricDetails →

Zinc phosphorus nitride-oxide wide-bandgap gate and interlayer dielectric

Zn4P6N12O is a thermodynamically stable wide-bandgap nitride-oxide with a computed bandgap near 3 eV and confirmed clear freedom-to-operate, claimed for gate, interlayer, passivation, and package-substrate dielectric applications.

Clear IP pathZn4P6N12O

Cross-alkali solid-state battery cell with sodium sulfide anode and lithium halide cathode electrolytes

A cell architecture pairing a sodium thiophosphate anode-side electrolyte with a lithium halide cathode-side electrolyte, separated by a discrete nanometer-scale barrier layer, differentiates over the emerging lithium-only barriered trilayer prior art.

Market $5-10Bsolid-state batteriesDetails →

Clear IP pathAlGa3N4 / AlGaN2

Aluminum gallium nitride ordered-alloy supplementary filler for non-beryllium TIM architectures

AlGa3N4 and AlGaN2 ordered III-nitride particles, confirmed phonon-stable across four computational potentials, serve as wide-bandgap supplementary fillers admixed with MgSiN2 in thermal interface materials for AI accelerator and HBM packaging.

Market niche-to-multi-$B (TIM filler market)non-beryllium packagingDetails →

Market $0.5-2Brare-earth recyclingDetails →

Ion-imprinted phosphonate-bis-picolinamide resin for dysprosium and terbium separation from magnet leachate

A cavity-imprinted polymer bearing a structurally defined BPDPA-P ligand achieves predicted Dy/Tb separation factors of 4–8 per pass and Dy/Nd factors of 30–100, reducing solvent inventory versus conventional SX cascades.

Clear IP pathBPDPA-P

Defined carve-outgamma-LiAlO2

Lithium aluminate ceramic for solid-state battery interfaces, radiation-hard electronics, and fusion breeder blankets

ALD-deposited gamma-LiAlO2 (>6 eV bandgap) serves as a Li-metal anode interphase, a radiation-tolerant dielectric layer, and — combined with Li4SiO4 — a tritium-breeding ceramic.

Clear IP pathAl6Cd4SO12 / Al6Cd4TeO12

Aluminum cadmium oxide chalcogenide wide-bandgap dielectric pair for semiconductor applications

Al6Cd4SO12 and Al6Cd4TeO12 form a thermodynamically stable sulfur/tellurium-substituted pair of wide-bandgap dielectrics with computed bandgaps of 2.7 and 2.6 eV respectively and a confirmed clear freedom-to-operate position.

Market $1-5Bsemiconductor gate/interlayer dielectricDetails →

Defined carve-outLi1.2Re0.4Mn0.4O1.8F0.2

Rhenium-stabilized lithium-rich disordered rock-salt cathode for high-capacity lithium-ion cells

Rhenium as a d0 stabilizer in Li-rich disordered rock-salt cathodes targets greater than 250 mAh/g capacity while occupying FTO-clean space outside the enumerated stabilizer list of leading competing patent art.

Market $5-10BEV batteriesDetails →

Heat-flux-map registration controller and multi-zone TIM dispenser system

A registration controller that converts a die heat-flux map into a filler-placement map and drives a multi-zone stencil printer or jet dispenser, capturing the equipment-vendor lane for zone-modulated TIM deposition lines.

Market $0.5-2Bpackaging equipmentDetails →

Solid

Methods of synthesizing and depositing the omnibus advanced materials

A cross-family method claim covering solid-state synthesis, single-crystal growth, PLD, sputtering, MOCVD, ALD, and post-deposition processing for all compositions in the portfolio, supported by more than 240 published exact-composition recipes.

materials manufacturingDetails →

Strontium hafnate perovskite high-permittivity dielectric for MIM and gate applications

Alkali-metal-free SrHfO3 perovskite offers permittivity ~32.7 and a wide bandgap (~4.17 eV), providing a manufacturable high-k dielectric for alkali-sensitive process nodes.

Clear IP pathSrHfO3

Clear IP pathBi2O3-SiO2-B2O3-BaO

Lead-free bismuth-silicoborate glass-binder lid-attach for high-thermal-budget packaging

A stiff (≥60 GPa) Pb-free Bi2O3-SiO2-B2O3 glass binder with a 380–440°C softening range provides an inorganic, high-modulus lid-attach bondline for stacked packages requiring elevated reflow budgets.

Market $1-5Bglass-core packagingDetails →

Clear IP pathBeO / Al2BeO4 / HfSiO4

Wide-bandgap oxide and nitride ceramics for radiation-hardened electronics and optical windows

A coordinated family of BeO, aluminum borate, hafnium silicate, silicon nitride, and related wide-gap materials (5 to 11 eV) provides insulator, optical window, and structural elements for space and nuclear applications.

Market $1-5Brad-hard electronicsDetails →

Market $1-5Bpower electronics packagingDetails →

Magnesium silicon nitride ceramic for high-thermal-conductivity power electronics packaging

Lithium-free MgSiN2 dense ceramic achieves ~35 W/m/K thermal conductivity with a dielectric constant of 6 to 9 and no metallic ions, providing a manufacturable thermal-interface substrate for power electronics.

Clear IP pathMgSiN2

Market $1-5Bwaste-heat recoveryDetails →

Hafnium nickel tin half-Heusler thermoelectric for mid-temperature waste-heat recovery

HfNiSn and zirconium-, titanium-, or antimony-substituted analogs achieve ZT of 0.8 to 1.2 at 800 K without lead or tellurium, offering a lead-free mid-temperature thermoelectric leg.

Defined carve-outHfNiSn

Clear IP pathAlF3 / ScF3 / AlN

Radiation-hardened aluminum fluoride, scandium fluoride, and aluminum nitride dielectrics for space electronics

AlF3, ScF3, AlN, and alkaline-earth difluoride fallbacks combine wide bandgaps above 5 eV, phonon stability, and bounded fluorine-vacancy migration barriers, forming a higher-confidence rad-hard insulator and optical-window family for space and nuclear use.

Market $1-5Brad-hard electronicsDetails →

Process for depositing amorphous aluminum oxychloride dielectric films with controlled chlorine retention

Melt-quench or chlorine-retaining vapor and solution routes produce amorphous AlOxCly dielectric films with chlorine held within plus or minus 5 atomic percent of target, enabling the retained-chlorine RDL dielectric for advanced packaging.

Market $1-5Bsemiconductor packagingDetails →

Mechanochemical ball-milling process for manufacturing sulfide and halide solid electrolytes

Ball milling at 30 to 60 Hz for 4 to 48 hours followed by an optional inert-atmosphere anneal produces halide and sulfide solid electrolytes at scale, backed by measured conductivity data from the resulting compositions.

Defined carve-outRE-T-Si (RE/Ce/La/Nd lead arms)

Down-selected rare-earth transition-metal silicide (RE-T-Si) genus for superconducting and heavy-fermion device applications

Phonon-validated, patent-prescreened Markush genus of RE-T-Si members claimed for device use and screening method — not bare composition.

Clear IP pathRE-T-Si (method-selected, heavy-fermion)

Heavy-fermion rare-earth silicide cryogenic sensor for magnetometry, bolometry, and transition-edge sensing

Device article using a screening-validated heavy-fermion RE-T-Si silicide as a low-temperature magnetometer, bolometer, or transition-edge sensor.

Market $0.5-1Bcryogenic sensingDetails →

Market $1-2Bsuperconducting quantum computingDetails →

Magnesium fluoride crystalline dielectric layer for mechanically robust superconducting-qubit devices

Rutile MgF2 combines a low optical dielectric constant with the highest bulk modulus in the fluoride candidate set, providing fabrication-stress resilience alongside reduced qubit dielectric loss.

Clear IP pathMgF2

Defined carve-outCeCuSi / CeNiSi / CeRuSi

Cerium-based ternary silicide group (CeCuSi / CeNiSi / CeRuSi) for cryogenic and superconducting device applications

Phonon-stable, patent-prescreened cerium silicide members packaged for device-use licensing in superconducting and cryogenic electronics.

Defined carve-outSr2Hf7O16

Strontium hafnate (Sr2Hf7O16) unusual-stoichiometry scintillator host for high-Z radiation detection

Sr2Hf7O16 extends the high-stopping-power A2B7O16 scintillator family with an A-site strontium substitution, broadening the composition portfolio for CT and calorimetry detectors.

Lanthanum-based ternary silicide (LaRuSi) for cryogenic and superconducting device applications

Phonon-stable, patent-prescreened LaRuSi member packaged for device-use licensing in superconducting and cryogenic electronics.

Defined carve-outLaRuSi

Defined carve-outSr2Zr7O16

Strontium zirconate (Sr2Zr7O16) unusual-stoichiometry scintillator host for radiation detection

Sr2Zr7O16 provides a lighter, lower-cost group-IV variant of the high-density A2B7O16 scintillator structure for CT and calorimetry detector applications.

Neodymium-based ternary silicide (NdNiSi) for cryogenic and superconducting device applications

Phonon-stable, patent-prescreened NdNiSi member packaged for device-use licensing in superconducting and cryogenic electronics.

Defined carve-outNdNiSi

Amorphous aluminum oxychloride ALD film with deliberately retained bound chlorine

A process-defined amorphous Al-O-Cl film with 2–25 at% bound chlorine delivers lower dielectric constant than dense alumina and provides copper passivation under bias and humidity.

Market $1-3BRDL passivationDetails →

ALD process for depositing bound-chlorine aluminum oxychloride passivation films

A cyclic ALD process using an aluminum precursor and a chlorine reactant produces amorphous Al-O-Cl films with 2–25 at% retained bound chlorine, verified by XPS or ToF-SIMS after thermal anneal.

Market $1-3BRDL passivation fabDetails →

Market $0.5-1Bsemiconductor logic/memoryDetails →

Calcium zirconate (CaZrO3) supply-advantaged high-permittivity gate dielectric

Three-engine phonon-stable zirconate perovskite with permittivity ~48.7, providing a hafnium-free design-around option for MOS capacitor and gate dielectric applications.

Clear IP pathCaZrO3

Market $0.5-1Bpackage-integrated passivesDetails →

Thin-film lithium tantalate ferroelectric dielectric for package MIM and RDL applications

Polycrystalline and amorphous LiTaO3 thin films provide a ferroelectric high-k dielectric option for package MIM and RDL, with single-crystal SAW and electro-optic substrate uses expressly excluded.

Defined carve-outLiTaO3

Clear IP pathNi-doped Li7P3S11

Nickel-modified Li7P3S11 sulfide electrolyte with enhanced ionic conductivity

Ni-modified thio-LISICON targeting ≥1×10⁻³ S/cm at room temperature, providing a second independent dopant route in the high-conductivity sulfide electrolyte lane.

Market $0.5-1Bsemiconductor logic/memoryDetails →

Barium hafnate (Ba3Hf2O7) layered-perovskite high-permittivity dielectric extension

Ruddlesden-Popper n=2 hafnate with predicted permittivity ~31.7, extending the alkaline-earth hafnate dielectric genus to layered-structure MOS capacitor embodiments.

Clear IP pathBa3Hf2O7

Copper electroplating bath and waveform for void-free fill of high-aspect-ratio glass-core vias

Three independently usable additive packages in an acid copper bath with pulse-reverse waveforms achieve void- and seam-free bottom-up fill for glass-core vias at aspect ratios of 3 to 20.

Market $0.5-2Bglass-core via metallizationDetails →

Pulse-reverse copper electroplating method for void-free fill of glass-core through-vias

A copper electroplating method using pulse-reverse or current-ramped waveforms with a specialized additive package achieves void- and seam-free fill of glass-core vias at aspect ratios from 3 to 20.

Market $0.5-2Bvia metallization fabDetails →

Clear IP pathLi(2+nz)(Mg,Ca)(1-z)M2(z)Cl4

Cubic-spinel divalent lithium chloride electrolyte genus modulated by Y/Sc/Hf/Ti/Ta/Nb

Open-space family of Li-Mg/Ca cubic chloride spinels with Y, Sc, Hf, Ti, Ta, or Nb modulation — differentiated from crowded Al/Zr/Ga/In halide art by composition and crystal framework.

Defined carve-outLa2Hf2O7

Lanthanum hafnate pyrochlore (La2Hf2O7) dielectric for radiation-hard and RF applications

Phonon-stable pyrochlore with permittivity ~30.8, claimed in narrow bulk and MOCVD forms for RF windows, filters, and radiation-hard components.

Market $0.2-0.5Brad-hard electronicsDetails →

Clear IP pathLi4HfMgCl8 / Li4MgTiCl8

Li4HfMgCl8 and Li4MgTiCl8 cubic-spinel halide electrolytes for solid-state batteries

The only two divalent chloride spinels stable across a 36-composition screening study — preferred specific members of the cubic-spinel halide electrolyte genus.

Market $0.5-2Bsolid-state batteriesDetails →

Sequential differential-precipitation process for rare-earth pair separation

A cascade of pH- and redox-adjusted oxalate, carbonate, hydroxide, fluoride, and sulfate precipitation stages separates Nd/Pr, Dy/Tb, La/Ce, Sm/Eu, and Y/heavy-RE pairs as a scalable alternative to long solvent-extraction trains.

Market $0.5-1Brare-earth refiningDetails →

Market $0.5-1Bgreen hydrogenDetails →

Cobalt-phosphide (Co3P) hydrogen-evolution cathode in open patent whitespace

Support-free Co3P occupies a gap in existing phosphide patent coverage, providing a scout-stage PGM-free HER cathode option for electrolyzer developers.

Defined carve-outCo3P

Market $0.5-1Bpower electronicsDetails →

Wide-bandgap inorganic substrates for high-temperature power and radiation-hard electronics

Closed set of seven high-stiffness, >5 eV gap substrates (BeO, HfSiO4, and five others) identified from a 30-million-entry survey for use in wide-gap epitaxial integration.

Defined carve-outBeO

Defined carve-outLi3MCl6 (M=Tm,Yb,Lu)

Tm/Yb/Lu lithium chloride halide in a buffer-protected solid-state battery stack

Li3MCl6 (M = Tm, Yb, Lu) rare-earth halides in a buffer-protected halide/sulfide stack — capturing whitespace distinct from the patented Y/Er/Dy halide analogues.

Market $0.5-2Bsolid-state batteriesDetails →

Defined carve-outLiPO2F2 + LiDFOB + LiFSI

Multi-component fluorinated electrolyte additive blend for LiF-rich SEI formation in lithium-metal batteries

A combination of fluorophosphate, fluoroborate, and fluorosulfonate additives targets a LiF/total-F SEI ratio ≥0.5, suppressing lithium dendrite growth and extending cycle life at high current density.

Market $1-3Blithium-metal / silicon-anode batteriesDetails →

Market $0.5-1Bcarbon captureDetails →

Barium ferrite oxygen carrier — supply-resilient backup for chemical-looping systems

Ba2Fe2O5 passes three independent stability models, providing a low-supply-risk backup carrier for chemical-looping carbon capture under the same integrated-process conditions.

Clear IP pathBa2Fe2O5

Clear IP pathBa8Li2Nb4Ta2O24

Tantalum-substituted lead-free niobate piezoelectric for MLCCs and RF filters

Ba8Li2Nb4Ta2O24 tungsten-bronze composition delivers approximately 2.4x greater polar asymmetry per cation than PbTiO3, providing a RoHS-compliant path to next-generation multilayer ceramic capacitors and RF filter ceramics.

Market $1-5Blead-free piezo MLCCDetails →

Twenty PFAS-free fluid packages replacing Novec, FC, and HFE product lines

Named closed-Markush drop-in packages spanning vapor cleaning, electronics cleaning, azeotropes, immersion cooling, and dielectric test use cases, each qualified under the platform purification process.

Market $1-3Belectronics cleaningDetails →

Clear IP pathBa5Ta4O15 / Ba3Ta2ZnO9 / Ba3MgTa2O9

Barium tantalate high-permittivity filler for package-integrated passive components

Ba5Ta4O15, Ba3Ta2ZnO9, and Ba3MgTa2O9 particles with dielectric constants of 42–47 form a previously unpatented high-permittivity filler narrowing, four-engine phonon-stable, complementing hafnate fillers for embedded capacitor packaging.

Market $1-2Bpackage-integrated passivesDetails →

Defined carve-outNa3SbS4 / Na3SbS4-xSex (0<x<=2)

Anhydrous dry-film Na3SbS4 thioantimonate electrolyte for sodium solid-state batteries

Hydrate-free, solvent-free dry-processed sodium thioantimonate (±Se substitution) with interfacial stabilization — protected at the process and architecture level, not the bulk composition.

Market $0.5-2Bsodium solid-state batteriesDetails →

PFAS-free amphiphilic surfactant compositions for firefighting foam, electroplating, and semiconductor processes

Application-matched zwitterionic head groups (alkyl polyglucoside, hydroxysultaine, betaine, phosphonium-sulfobetaine) paired with siloxane or branched hydrocarbon tails achieve predicted surface tension of 15–22 mN/m as drop-in PFAS replacements.

Market $1-3Bfirefighting foamDetails →

Market $1-3Bwaste-heat recoveryDetails →

Copper selenide multifunctional material for thermoelectric generation, PFAS treatment, and battery anodes

One earth-abundant Cu2Se composition operates as a high-efficiency thermoelectric leg, a redox-active PFAS-destruction sorbent, and a high-capacity lithium conversion anode.

Clear IP pathCu2Se

Clear IP pathZn(Ge1-xSnx)N2

Bandgap-tunable zinc germanium nitride alloy absorber for tandem solar cells and SWIR detectors

Zn(Ge,Sn)N2 ternary nitride alloys span 1.1-3.5 eV bandgap continuously, offering an earth-abundant, indium-free absorber for tandem photovoltaics and short-wave infrared detectors without cadmium or tellurium.

Market $1-5Btandem photovoltaicsDetails →

Clear IP pathB2O3 (+ SiO2/Al2O3/ZnO)

Boron oxide glass network low-permittivity underfill and inter-layer dielectric

A B2O3-based glass network with dielectric constant 3.8–4.5 at 1 MHz and reflow compatibility at 300–400°C provides the lowest-permittivity inorganic underfill or inter-layer dielectric identified for HBM redistribution layers and glass-core packages.

Market $1-3BRDL/underfillDetails →

Clear IP pathLiBO2 / Li2B4O7 / Li3-xNaxSiO4(Hf,Zr)

Borate and Hf/Zr orthosilicate add-on cathode-coating process for solid-state batteries

Modular process for vacancy-engineered LiBO2, Li2B4O7 borate, and Hf/Zr-orthosilicate films on cathode particles in halide-electrolyte solid-state cell contexts.

Market $0.5-2Bsolid-state batteriesDetails →

Defined carve-outLi6PS5Cl

Lithium argyrodite sulfide solid electrolyte separator paired with lithium aluminate interphase

Li6PS5X (X = Cl/Br/I) separator with ionic conductivity up to 8×10⁻⁴ S/cm is paired with a LiAlO2 interphase to isolate the sulfide from lithium metal and prevent degradation.

Market $0.5-2Bthin-film photovoltaicsDetails →

Copper antimony sulfide skinnerite thin-film solar absorber

Cu3SbS3 skinnerite is a structurally distinct, earth-abundant absorber phase with a 1.0-1.5 eV direct bandgap, differentiated from and explicitly excluding the phase-unstable CuSbS2 and Cu3SbSe3 siblings.

Clear IP pathCu3SbS3

Clear IP pathAAlO2 / A2SnO3 / A'Al2B2O7

Alkali aluminate, stannate, and aluminoborate dielectric reliability fillers for high-power packaging

A family of alkali and alkaline-earth ceramic fillers — including LiAlO2, Na2SnO3, and Na2Al2B2O7 — improves dielectric breakdown and ionic-migration reliability in underfills and inter-layer dielectrics for AI and radiation-tolerant packages.

Market $1-2Bpackage reliabilityDetails →

Li4P2O7 pyrophosphate as interlayer or grain-boundary modifier in solid-state batteries

Experimentally anchored lithium pyrophosphate deployed as a positionally-defined battery interface layer or grain-boundary modifier — method-of-use posture, not a bulk composition claim.

Defined carve-outLi4P2O7

Market $1-3BCO2 utilizationDetails →

Potassium palladium sulfide electrocatalyst for CO2 reduction to formate and CO

K2PdS2, a visible-light-compatible semiconductor (2.38 eV gap), reduces CO2 to formate or CO in a flow cell with lower palladium content than conventional Pd catalysts.

Clear IP pathK2PdS2

Computational filler screening method integrated with thermal interface material manufacturing

A multi-potential phonon screening workflow that gates filler selection on cross-engine harmonic stability, then feeds directly into composite preparation and package assembly, creating a defensible materials-selection record.

Market defensive (not buyer-specific)materials-screening IPDetails →

Li2SiO3 metasilicate as interlayer or grain-boundary modifier in solid-state batteries

Phonon-stable lithium metasilicate as a standalone interlayer or grain-boundary modifier in solid-state cells — cathode-coating use narrowed around established NMC/NCA coating prior art.

Defined carve-outLi2SiO3

Market $0.5-1Badvanced packagingDetails →

Earth-abundant borate and borophosphate dielectrics for advanced packaging and radiation-hard applications

BPO4, SrB4O7, and related borates combine wide bandgaps (~7.3 eV for BPO4) with low supply risk, providing a sustainable alternative to rare-earth or niobium dielectric materials.

Clear IP pathBPO4

Clear IP pathNa2ZrO3 / Na2HfO3

Na2ZrO3/Na2HfO3 wide-gap oxide anode-side interlayer for sodium solid-state batteries

Wide-bandgap sodium zirconate or hafnate interlayer (1 nm–2 µm, ≥4 eV) suppressing sodium-metal void formation and dendrites — the sodium-cell analogue of the lithium-garnet interlayer family.

Market $1-3Bsodium solid-state batteriesDetails →

Retained-chlorine amorphous aluminum oxychloride ALD film for copper-barrier and packaging dielectric applications

Process-defined amorphous Al-Cl-O films (4–8 at% Cl) deposited by ALD serve as copper-diffusion barriers and interlayer dielectrics in glass-through-via and interposer packaging structures.

Market $1-3Badvanced packagingDetails →

Defined carve-outNaZr2(PO4)3

Unsubstituted NaZr2(PO4)3 NASICON coating for sodium solid-state battery electrodes

Crystalline unsubstituted NaZr2(PO4)3 positional coating (2 nm–2 µm) on sodium cathode particles or SE interfaces, formed by a dry controlled-atmosphere process — the sole FTO-clean survivor in the sodium conductive-coating lane.

Market $15-40M (standalone wedge, LEADS #7)sodium solid-state batteriesDetails →

Integrated hydrogen-evolution electrode with boron arsenide heat-spreader for high-current electrolyzers

A tiled BAs heat-spreader in thermal contact with a CrP hydrogen-evolution electrode via a shared current collector removes 100–1,000 W/cm² during high-density electrolyzer operation.

Market $1-3Bgreen hydrogenDetails →

Defined carve-outLa2Hf2O7

Lanthanum hafnate pyrochlore high-permittivity dielectric for MIM capacitors

Wide-gap pyrochlore La2Hf2O7 with permittivity ~30.8 and bandgap ~4.29 eV offers a rare-earth hafnate complement to binary HfO2 for high-density MIM capacitors.

Solid

Method of operating and endpoint-qualifying a solid-state battery cell

Cell operation method cycling the ASSB under defined C-rate and stack-pressure conditions and confirming a measured endpoint — CCD, interfacial resistance, capacity retention, or coulombic efficiency.

Market $1-3BLi-ion batteriesDetails →

Copper selenide conversion-anode lithium-ion cell with optional ceramic interphase

Cu2Se conversion anodes deliver 200–700 mAh/g capacity in full lithium-ion cells; an optional LiAlO2 interphase suppresses dendritic copper deposition for improved cycle stability.

Clear IP pathCu2Se

Defined carve-outLa,Mn:Co3O4

Lanthanum and manganese co-doped cobalt oxide spinel catalyst for oxygen evolution

La+Mn co-doped Co3O4 achieves less than 290 mV overpotential at 10 mA/cm2 in alkaline media with less than 20 mV degradation after 2000 cycles, outperforming bare cobalt oxide for green-hydrogen anodes.

Market $1-5Bgreen hydrogenDetails →

Clear IP pathBaHfO3 / Dy2O3 / YBO3

Hafnate, rare-earth sesquioxide, and borate companion dielectrics for packaging and photonic substrates

A DFT- and DFPT-validated suite of hafnate perovskites (permittivity up to 41), rare-earth oxides, and borates extends the wide-bandgap dielectric platform to high-k capacitor and photonic-substrate applications.

Market $1-3Badvanced packagingDetails →

Market $1-5BmmWave/6GDetails →

Rare-earth trifluoride low-loss dielectric resonators for millimeter-wave and 6G applications

NdF3, SmF3, and TbF3 trifluoride ceramics combine moderate permittivity (~8-15) with a computed loss tangent below 1e-3 at 100 GHz, targeting high-Q resonators for 30 to 300 GHz wireless infrastructure.

Clear IP pathNdF3

Defined carve-outGe2Sb2Te5

Doped germanium antimony telluride phase-change memory for non-volatile and neuromorphic applications

Ag-, In-, Bi-, or Se-co-doped Ge2Sb2Te5 in confined-cell and interface-engineered geometries enables sub-100 ns multi-level switching for non-volatile memory and neuromorphic computing, claimed beyond the undoped GST baseline.

Market $1-5Bnon-volatile memoryDetails →

Market $1-5Bthermoelectric generationDetails →

Doped lead telluride thermoelectric for mid-temperature power generation modules

Na-, Tl-, La-, or In-doped PbTe and tin- or selenium-alloyed variants reach ZT of 1.5 to 1.8 at 750 K, claimed in specific dopant ranges and module architectures beyond undoped PbTe.

Defined carve-outPbTe

Solid

Closed-loop sensor-controlled replenishment method for PFAS-free chrome bath surfactants

Surface-tension, foam-height, and redox-signal-gated automatic dosing maintains consistent mist suppression and extends PFAS-free surfactant life across long plating runs.

Market $0.2-0.5Bmetal finishing / hard chrome platingDetails →

Defined carve-outGa2O3 (epsilon/kappa)

Orthorhombic epsilon/kappa gallium oxide power and radiation-hardened semiconductor devices

Phase-pure orthorhombic Ga2O3 enables ferroelectric-gate normally-off transistors and radiation-hardened Schottky diodes targeting 600 V to 3.3 kV power electronics and aerospace applications, distinct from commercially available alpha and beta phases.

Market $5B+power electronicsDetails →

Market $0.5-1Brad-hard space electronicsDetails →

Heavy rare-earth xenotime orthophosphate radiation-hardened dielectrics

YPO4, ErPO4, LuPO4, and related heavy rare-earth xenotime orthophosphates are phonon-validated radiation-hardened dielectric and passivation materials, explicitly distinguished from the phonon-unstable light rare-earth monazite polymorphs.

Clear IP pathYPO4

Methods of characterizing and testing the omnibus advanced materials

A cross-family test-method claim covering XRD, piezoresponse force microscopy, electro-optic extraction, capacitance-voltage, hydrogen evolution voltammetry, radiation dose testing, and photoemitter quantum efficiency measurement across all portfolio compositions.

materials characterizationDetails →

Clear IP pathMgF2/CaF2/BaF2/SrF2

Metal fluoride low-k dielectric family for capped redistribution layer applications

MgF2, CaF2, BaF2, SrF2, and K2SiF6 are two-engine validated capped low-k dielectric alternatives to AlF3, broadening fluoride-family coverage for redistribution layer and MIM applications.

Market $0.2-0.5BRDL low-kDetails →

Clear IP pathSi3N4/AlON/MgSiN2/Sr2Si5N8/B4C

Thermally conductive nitride and carbide liner family for through-glass via thermal management

Silicon nitride, AlON, MgSiN2, undoped Sr2Si5N8, and B4C provide a cross-validated family of thermally conductive insulating liner alternatives to aluminum nitride for glass-core via walls.

Market $0.2-0.5Bglass-core thermal linerDetails →

Defined carve-outC (benzodithiophene-5,10-dione core, representative)

Heteroacene-quinone covalent organic framework for electrochemical direct air capture of CO2

Redox-active framework material that captures CO2 from ambient air by electrochemical potential swing, using heteroacene-quinone cores distinct from prior simple-quinone art.

Market $5-10Bdirect air captureDetails →

Validation method for screening-selected rare-earth silicide superconductor and heavy-fermion candidates

Structured test protocol — first-principles phonons, measured superconducting transition, calorimetry, diffraction, and FTO counsel review — converts screening results to claim-grade evidence.

Market $0.5-1Bsuperconducting electronicsDetails →

Market $0.5-1Bpackage-integrated passivesDetails →

Alkali-free perovskite hafnate and zirconate high-k dielectric fallback for MIM capacitors

CaHfO3, SrHfO3, CaZrO3, and SrZrO3 in their ground-state orthorhombic phase provide cross-validated alkali-free fallback high-k dielectrics for package-integrated MIM capacitors.

Clear IP pathCaHfO3

Clear IP pathW-B-N (graded)

Depth-graded tungsten boron nitride copper diffusion barrier for glass-core vias

A W-B-N barrier with a boron-rich glass-facing face and nitrogen-enriched copper-facing face suppresses grain-boundary copper diffusion; the composition gradient is SIMS-verifiable and the claimed feature.

Market $0.2-0.5Bglass-core barrierDetails →

Market $0.2-0.5Brad-hard packagingDetails →

Zircon substrate layer for low-CTE radiation-tolerant glass-core packages

ZrSiO4 in its ground-state phase provides a low CTE, high-bandgap (~4.7 eV), radiation-tolerant substrate layer for glass-core packages, with turbine, dental, and refractory uses excluded.

Defined carve-outZrSiO4

Market $0.2-0.5Bglass-core reliabilityDetails →

Copper tin intermetallic stress-redistribution interlayer for glass-core package reliability

A Cu6Sn5 or related Cu-Sn intermetallic interlayer between low-CTE glass and high-CTE copper redistributes thermomechanical stress and reduces package warpage through modulus mismatch management.

Clear IP pathCu6Sn5

Silane-passivated silicon anode with PFAS-free polymer binder for lithium-ion batteries

Silane surface grafting on silicon nanostructures combined with a PFAS-free binder (PAA, CMC, alginate, or SBR) reduces first-cycle irreversible capacity loss and provides regulatory headroom under PFAS restrictions.

Market $1-3Blithium-ion batteriesDetails →

Clear IP pathLiBF4 / Li3AlF6 / LiHF2

Lithium fluoride-based electrolyte matrix for solid-state batteries

Wide-electrochemical-window LiBF4/Li3AlF6/LiHF2 fluoride matrix for use as a high-voltage-compatible solid electrolyte or interphase layer in composite and nanostructured form.

Market $0.2-0.5Bsealed-cavity packagingDetails →

Integrated non-evaporable getter layer for moisture and oxygen control in sealed glass-core packages

Zr2Fe and Ti3Al getter alloys integrated within sealed glass-core package regions scavenge oxygen and moisture, protecting copper interconnects and halogen-containing dielectric films from corrosion.

Clear IP pathZr2Fe

Market $0.5-1Badvanced semiconductor packagingDetails →

Lithium silicon nitride (LiSi2N3) wide-bandgap dielectric for semiconductor packaging — backup position

Phonon-stable LiSi2N3 with a 5.0 eV bandgap and static permittivity of 10.3 offers process adjacency to established silicon nitride passivation flows as a backup dielectric member.

Clear IP pathLiSi2N3

Market $0.5-1Bmillimeter-wave / 5G-6G infrastructureDetails →

Rare-earth trifluoride dielectrics for millimeter-wave filters and resonators (24-110 GHz)

NdF3/SmF3/TbF3 and related rare-earth trifluorides as low-loss mm-wave dielectric layers and resonator substrates for 5G/6G infrastructure.

Clear IP pathNdF3

Market $0.5-1Belectronic ceramicsDetails →

Cubic-spinel AB2O4 genus (MgAl2O4, ZnAl2O4, MgCr2O4, FeAl2O4) for electronic-grade recovered-metal products

Five phonon-stable cubic spinel compositions extend the zinc-gallate product platform into radiation-hard and wide-bandgap ceramic applications, all conditioned on a recovered-feed impurity-acceptance specification.

Clear IP pathMgAl2O4

Market $0.2-0.5Badvanced packaging RDLDetails →

Lanthanum orthoborate (LaBO3) mid-permittivity halogen-free redistribution-layer dielectric

Three-engine phonon-stable rare-earth orthoborate with permittivity ~16.5 and 4.50 eV bandgap as a halogen-free intermediate-permittivity option for advanced packaging RDL stacks.

Clear IP pathLaBO3

Clear IP pathB2W (+ MB2 diborides)

Refractory boride copper diffusion barrier family for glass-core packaging

Tungsten boride lead plus six cross-validated transition-metal diborides (TiB2, ZrB2, HfB2, TaB2, VB2, AlB2) and an amorphous boron nitride backup provide broad design-around copper barrier coverage.

Market $0.5-1Bglass-core barrierDetails →

Market $0.5-1BSamsung HBM5 in-stackDetails →

Zinc silicon nitride non-toxic II-IV nitride filler for stress-sensitive HBM stacks

ZnSiN2 particles — a non-beryllium, non-toxic diamond-like nitride — serve as a thermally conductive supplementary filler in MgSiN2-based TIMs for stress-sensitive in-stack HBM thermal interfaces.

Clear IP pathZnSiN2

advanced semiconductor packagingDetails →

Holmium disilicate (Ho2Si2O7) phonon-stable member of the rare-earth-silicate dielectric platform

Computationally confirmed phonon and thermal stability at 350 K broadens the rare-earth-disilicate Markush for packaging dielectric applications; dielectric permittivity measurement remains pending.

Clear IP pathHo2Si2O7

Market $0.2-0.5Bsemiconductor passivesDetails →

Rare-earth orthophosphate dielectrics (YPO4 lead; La/Nd/Tb/Dy arms) for MOS and RF use

YPO4 is four-engine phonon-stable with bandgap ~5.5-6.2 eV as the genus lead; remaining orthophosphate arms asserted dependent for non-environmental-barrier-coating dielectric applications.

Defined carve-outYPO4

Defined carve-outTiB2 / ZrB2 / HfB2 / AlMgB14 (dielectric-shelled)

Dielectric-shelled titanium, zirconium, and hafnium diboride filler for electrically isolated packaging

Conformal 1–50 nm dielectric shells on TiB2, ZrB2, HfB2, and AlMgB14 particles maintain volume resistivity above 10⁸ Ω·cm at sub-percolation loadings, enabling high-stiffness refractory fillers in electrically sensitive package locations.

Market $0.5-1Bpower-electronics-adjacent packagingDetails →

rare-earth recyclingDetails →

Gadolinium orthophosphate (GdPO4) phonon-stable member of the rare-earth-phosphate separation platform

Stability of GdPO4 at 350 K confirms that the computational soft-mode instability previously seen in the series is confined to terbium and dysprosium, strengthening the rare-earth-phosphate genus breadth.

Clear IP pathGdPO4

Defined carve-outR3P+-(CH2)n-SO3-

Phosphonium-sulfobetaine copper electrofill additive for HBM4 through-glass and through-silicon vias

A zwitterionic phosphonium-sulfonate-betaine leveler additive with computed solvated dipole approximately 3x that of Janus Green B targets void-free copper filling of high-aspect-ratio through-glass and through-silicon vias in advanced memory packaging.

Market $0.5-2BHBM4 advanced packagingDetails →

Market $0.2-0.5Bpower electronics packagingDetails →

Lithium silicon nitride (LiSi2N3) thermal interface material for power electronics packaging

Phonon-stable wide-gap nitride thermal interface material in narrow method-of-use form: nanostructured grain size, die-attach and preform formats, 25-250 C thermal-cycling context.

Defined carve-outLiSi2N3

Market $0.5-1Bpackage reliability fallbackDetails →

Yttrium aluminum garnet thermal-cycling support filler for advanced packaging

Y3Al5O12 garnet particles, confirmed phonon-stable and supported by approximately 217 indexed synthesis recipes, serve as a refractory thermal-cycling support filler in hexagonal boron nitride and aluminum nitride composite TIMs.

Clear IP pathY3Al5O12

rare-earth recyclingDetails →

Samarium orthophosphate (SmPO4) phonon-stable member of the rare-earth-phosphate separation platform

Phonon and AIMD stability confirmation for SmPO4 contributes to the affirmative argument that soft-mode issues are localized to mid-shell Tb/Dy occupancies, supporting the breadth of the rare-earth separation Markush.

Clear IP pathSmPO4

Market $0.5-1Bquantum hardwareDetails →

Manganese-rich ordered chalcogenide for quantum-anomalous-Hall and spintronic devices

Mn2SbTe and related manganese-rich phases offer approximately 3.3x greater phonon-stability margin and reduced antisite disorder compared with MnBi2Te4, providing a stronger platform for quantum-anomalous-Hall and axion-insulator device research.

Clear IP pathMn2SbTe

Market $0.2-0.5Badvanced packagingDetails →

Aluminum borate (AlBO3) dielectric for through-silicon-via barriers and copper diffusion barriers

Wide-gap (~5.8-6.1 eV) aluminum borate thin film, bilayer, or graded stack for TSV liner and copper-diffusion-barrier dielectric applications in advanced packaging.

Clear IP pathAlBO3

Clear IP pathHfO2 (integration partner)

Packaged system integrating hafnium oxide gate dielectric with advanced thermal interface material

A packaged logic or memory die bearing an industry-standard hafnium oxide high-k gate dielectric, co-integrated with a disclosed zone-modulated or nitride-filler TIM-1 layer that thermally manages the same die.

Market $1-2BHBM gate-stack + package thermalDetails →

Defined carve-outNa2LiAlF6

Na2LiAlF6 lithium-substituted cryolite fluoride film for high-voltage solid-state batteries

Ultra-wide-bandgap (~7.7 eV) lithium-substituted cryolite as a discrete separator, interlayer, or high-voltage cathode-facing film — differentiated from the unsubstituted Na3AlF6 prior art.

rare-earth recyclingDetails →

Thulium orthophosphate (TmPO4) phonon-stable member of the rare-earth-phosphate separation platform

Phonon and AIMD stability of TmPO4 at 350 K, together with GdPO4 and SmPO4 data, provides structural evidence confining soft-mode instability to Tb and Dy and bolstering Markush coverage for rare-earth recycling.

Clear IP pathTmPO4

Defined carve-outCs2Te / Cs3Sb

Cesium telluride and cesium antimonide photocathode materials for photomultipliers and photoinjectors

A validated Markush group spanning Cs2Te UV photocathodes and Cs3Sb visible photocathodes is claimed for photomultiplier, image intensifier, and accelerator photoinjector device applications; freedom-to-operate analysis is ongoing and counsel review is pending.

Market $0.5-1BphotomultipliersDetails →

Clear IP pathBFeHo (B_x Fe_y Ho_u)

Holmium iron boride (BFeHo) magnetically-recoverable PFAS sorbent

Phonon-confirmed rare-earth iron boride providing combined magnetic separability and PFAS sorption, with a feedstock pathway from end-of-life Nd-Fe-B magnet recycling.

Market $0.2-0.5Bwater treatmentDetails →

Market $0.5-1Bpackage reliability fallbackDetails →

Calcium magnesium orthosilicate low-permittivity refractory filler for package underfills

Monticellite CaMgSiO4 particles with dielectric constant ~7 and three-engine-confirmed phonon stability provide a chemically durable, low-permittivity refractory filler for underfill and inter-layer dielectric applications in advanced packages.

Clear IP pathCaMgSiO4

Market $0.3-1Bsodium solid-state batteriesDetails →

Pre-formed NaBF4 fluoroborate interface film for sodium-metal solid-state batteries

Deliberately deposited discrete NaBF4 film (5–200 nm, ~8.3 eV bandgap) at the sodium-metal anode interface — distinguished from in-situ electrolyte-additive interphases.

Defined carve-outNaBF4

Defined carve-outTl2Ba2Ca2Cu3O10

High-temperature superconductor wire and tape compositions for fusion, MRI, and accelerator magnets

Thallium-2223 cuprate tape (Tc ~119 K), Sc-doped MgB2, and potassium-doped iron arsenide provide high-field magnet conductors for fusion, medical, and particle-accelerator programs.

Market $1-3Bfusion magnetsDetails →

Market $0.2-0.5BphotonicsDetails →

Rubidium lanthanum tetrafluoride (RbLaF4) for photonic coatings and scintillators

Phonon-confirmed alkali rare-earth tetrafluoride with predicted >90% optical transparency across 200-1000 nm for photonic coatings, scintillators, and radiation-hard fluoride substrates.

Clear IP pathRbLaF4

Market $0.5-1Bpackage reliability fallbackDetails →

Magnesium aluminate spinel reliability filler for package thermal cycling

MgAl2O4 and substituted-divalent spinel particles provide a well-characterized, broadly synthesizable reliability and thermal-cycling filler backed by approximately 174 indexed synthesis routes.

Clear IP pathMgAl2O4

Market $0.3-1Bsolid-state batteriesDetails →

Crystalline LiBSiO4 borosilicate interlayer and LTCC/mm-wave dielectric material

Phase-pure crystalline lithium borosilicate (~6.4 eV bandgap) serving as both an insulating battery interlayer and a co-fireable LTCC/millimeter-wave dielectric with alumina-matched CTE (~7.5 ppm/K), densifiable below 900 °C.

Defined carve-outLiBSiO4

Clear IP pathCu3PS4 / Cu3Se2 / Cu4KSe3

Copper chalcogenide and thiophosphate companion materials for thermoelectric and battery applications

A family of copper-bearing chalcogenides — including Cu3PS4, Cu3Se2, and alkali-substituted variants — extends the multifunctional Cu2Se platform across thermoelectric and anode uses.

Market $0.5-1BthermoelectricDetails →

Synthesis methods for oxidation-stable chrome-bath fume suppressants

Two patentable routes producing alpha-hydrogen-free sulfonates via sulfite/Bunte-salt chemistry and phosphonium sulfobetaines via sultone ring-opening, both designed to resist chromic-acid degradation.

Market $0.2-0.5Bspecialty surfactant manufactureDetails →

Market $0.5-1Bwaste-heat recoveryDetails →

Vanadium-iron-antimony half-Heusler thermoelectric — PGM-free, cobalt-free supply-resilient backup

VFeSb provides a semiconductor thermoelectric leg free of platinum-group metals and cobalt, confirmed stable across three independent computational models.

Defined carve-outVFeSb

Market $0.5-1Bnuclear fusionDetails →

Lithium orthosilicate pebble-bed ceramic for fusion tritium breeding

6Li-enriched Li4SiO4 pebbles absorb neutrons to release tritium fuel and maintain structural integrity over 1,000 thermal cycles between 500 °C and 950 °C.

Clear IP pathLi4SiO4

Market $1-5BCO2 utilizationDetails →

Dual-dopant copper alloy catalyst for selective CO2 electroreduction

Copper co-doped with two post-transition metal atoms (e.g., bismuth and tin) enables tunable selectivity toward formate, CO, or C2 products in CO2 electroreduction, occupying whitespace above single-dopant prior art.

Clear IP pathCu(Bi,Sn)

Market $0.5-1BCO2 utilizationDetails →

Sodium palladium sulfide backup electrocatalyst for electrochemical CO2 reduction

Na2PdS2 is a dynamically stable polar sulfide with confirmed dielectric character, serving as a backup CO2-reduction cathode pending bandgap refinement.

Clear IP pathNa2PdS2

Market $1-5Bthin-film PVDetails →

Strontium zinc phosphide Zintl photovoltaic absorber with earth-abundant composition

SrZn2P2 combines a direct bandgap of ~1.72 eV matched to single-junction solar efficiency with earth-abundant, non-toxic elements, claimed through device-stack and passivation embodiments distinct from the published bare-composition film.

Defined carve-outSrZn2P2

Market $0.3-1Badvanced packagingDetails →

Crystalline aluminum oxyfluoride and fluoroborate barrier dielectrics for advanced packaging

AlFO, topaz, and BaAlBO3F2 are phonon-characterizable wide-gap crystalline barrier dielectrics providing a backup alternative to amorphous Al-Cl-O in packaging applications.

Clear IP pathAlFO

Defined carve-outLi3OCl / Na2LiAlF6 / Na2.6Mg0.2PS4

Lithium oxide chloride antiperovskite and magnesium-doped sodium thiophosphate solid electrolytes

Li3OCl antiperovskite and divalent magnesium- or zinc-doped Na3PS4 variants provide sodium and lithium solid electrolyte options that avoid tungsten substitution and other compositions covered by recent prior art.

Method of electrochemical CO2 reduction using an alkali palladium sulfide cathode

Operating method for a CO2 reduction cell with a K2PdS2 or Na2PdS2 cathode targeting formate or CO at Faradaic efficiencies of 30–80% and potentials of -0.7 to -1.1 V vs RHE.

Market $1-3BCO2 utilizationDetails →

Clear IP pathBa8Li2Nb6O24

Barium lithium niobate tetragonal tungsten bronze lead-free piezoelectric

Phonon-stable Ba8Li2Nb6O24 tungsten-bronze ferroelectric offers a lead-free alternative to PZT for piezoelectric transducer and electro-optic component applications.

Market $1-5Bpiezo devicesDetails →

Market $1-5Bhigh-T sensorsDetails →

Yttrium aluminum borate huntite piezoelectric for high-temperature transducers

Lead-free YAl3B4O12 huntite aluminoborate maintains piezoelectric activity above 800 degrees Celsius, enabling sensors and transducers in high-temperature environments where PZT cannot operate.

Clear IP pathYAl3B4O12

Defined carve-outMg2SiO4 / YAlO3 / CdTe

Doped forsterite, yttrium aluminate, and cadmium telluride optical and photovoltaic compositions

Neodymium-doped YAlO3 laser hosts, cadmium telluride solar absorbers, and forsterite structural ceramics claimed in specific dopant and device embodiments distinct from the mature undoped materials.

Market $1-5BlasersDetails →

Market $1-5BIR photonicsDetails →

Layered palladium and platinum sulfide chalcogenides for broadband infrared windows and nonlinear optics

K2PdS2, Na2PdS2, K2PtS2, and Rb2PtS2 are phonon-stable, closed-shell chalcogenides with 0.5 to 25 micron transparency, offering non-toxic broadband IR optical windows and second-harmonic-generation hosts to replace silver gallium sulfide.

Clear IP pathK2PdS2

Low-beryllium lithium halide solid electrolyte as an alternative to indium-based conductors

Li2BeCl4 sits near the thermodynamic hull with beryllium capped at 1.5 wt% and magnesium substitution available, offering a low-critical-material pathway to lithium halide solid electrolytes distinct from indium- and rare-earth-based competitors.

Clear IP pathLi2BeCl4

Wide-bandgap scintillator hosts for radiation-tolerant detector substrates in high-flux and space environments

The disclosed dense, wide-gap scintillator hosts show computed radiation-tolerance proxies suited to elevated-radiation service in particle physics, space instrumentation, and nuclear monitoring.

Market $0.5-1Bhigh-energy physicsDetails →

Clear IP pathNd3GaO6 / Pr3GaO6 / Y3GaO6

Lanthanide gallate oxide family for moderate-permittivity package MIM capacitors

A 16-member isostructural Ln3GaO6 gallate genus with all members phonon-stable and five computed at dielectric constant 15–16, providing an uncrowded alternative to hafnium-oxide MIM dielectrics.

Market $0.5-1Bpackage-integrated passivesDetails →

Clear IP pathR-P+(R'')3-CH2-CH(OH)-CH2-SO3-

Phosphonium-sulfobetaine PFAS-free surfactant for oxidative chrome-bath fume suppression

A phosphonium head group replaces the conventional ammonium in sulfobetaine surfactants, providing improved hydrolytic stability under chromic-acid and oxidative electroplating conditions.

Market $0.5-1BelectroplatingDetails →

Market $0.5-1Boxide dielectricsDetails →

Scandium manganese nickel double-perovskite magnetodielectric oxide

Sc2MnNiO6 ordered double perovskite is a near-thermodynamic-stability magnetodielectric oxide candidate with a 1.82 eV bandgap and clean freedom-to-operate, disclosed as a development-stage dependent pending ordered-phase synthesis confirmation.

Clear IP pathSc2MnNiO6

Defined carve-outxLi2MnO3.(1-x)LiMO2

Lithium-manganese-rich rocksalt cobalt-free cathode — backup position with oxide coating

A Li2MnO3-stabilized layered-composite and LiMn2O4 spinel backup arm, claimed in combination with the shared coating Markush, preserves a high-capacity cobalt-free cathode option within the EF7 genus.

Market $0.5-1Blithium-ion batteriesDetails →

Market $0.5-2B (6G/FR2 RF filter + LTCC dielectric niche, moat-gated on Q*f)rad-hard packaging (candidate)Details →

Magnesium aluminoborate sinhalite ceramic for millimeter-wave and RF dielectric components

MgAlBO4 sinhalite is a phonon-validated, alumina-CTE-matched wide-bandgap aluminoborate ceramic with computed permittivity near 8.5, silver co-fireable below 900 C from commercial feedstock, and no identified prior art on its dielectric device applications in the 5G/6G FR2 filter space.

Defined carve-outMgAlBO4

Market nicheclosed-process packagingDetails →

Encapsulated beryllium carbodiimide and beryllium silicon nitride filler for closed-process packaging

Hydrolysis-resistant shell-encapsulated BeCN2 or BeSiN2 particles in controlled admixture with MgSiN2 provide very high stiffness for closed-process packaging environments where beryllium handling protocols are in place.

Clear IP pathBeCN2

Licensing requiredLi2PNO2

Crystalline Li2PNO2 phosphonitride for interface-engineered solid-state battery use

Crystalline LiPON-analog phosphonitride available for specific non-anticipated interface-engineered architectures only — bulk composition and bulk solid-electrolyte use are prior-art established.

Defined carve-outZrSiO4 / LaAlO3

Zircon (ZrSiO4) and lanthanum aluminate (LaAlO3) backup dielectric arms for packaging applications

Radiation-hard zircon and higher-permittivity LaAlO3 serve as phonon-stable backup dielectric members within the rare-earth-silicate platform, with LaAlO3 filed under a proviso pending IDS review.

Market $0.5-1Badvanced semiconductor packagingDetails →

BeSiN2 / HfGeO4 / ZrGeO4 / YAl3B4O12 (lead promoted arms)

Dielectric and substrate backup compositions: BeSiN2, HfGeO4, ZrGeO4, YAl3B4O12, and related species

Genus-broadening portfolio of ten candidate dielectric, wide-gap, and fluoride-matrix compositions, four of which have been promoted to three-engine phonon-stable status pending full FTO clearance.

Market $0.2-0.5BdielectricsDetails →

Market niche/prove-nextAI accelerator high-flux hotspot fillerDetails →

Cubic carbon nitride hard-phase TIM filler produced by high-pressure synthesis

Phase-pure cubic C3N4 particles synthesized at ≥5 GPa serve as a wide-bandgap, high-stiffness hotspot filler within zone-modulated thermal interface materials for AI accelerator packages.

Clear IP pathC3N4

Ionic conductivity acceptance and in-line QC method for solid-state electrolyte manufacturing

Composition-agnostic incoming-acceptance process gating solid-state electrolyte lots by measured room-temperature AC-impedance conductivity thresholds, integrated into ASSB stack manufacturing.

Market $0 (by construction); procedural/defensivesolid-state battery manufacturingDetails →

Market $0.2-0.5Badvanced packaging RDLDetails →

Strontium scandium borate (Sr2Sc2B4O11) halogen-free redistribution-layer dielectric

Halogen-free borate glass-ceramic RDL dielectric with 4.47 eV bandgap, claimed as a dependent embodiment pending DFT phonon refinement of a residual soft mode.

Clear IP pathSr2Sc2B4O11

Market $0.5Bpackage reliability fallbackDetails →

Rare-earth stannate pyrochlore reliability filler for advanced packaging

Y2Sn2O7, Sm2Sn2O7, and related rare-earth stannate pyrochlore particles at sub-fractional loadings provide thermal-cycling and dielectric-breakdown reliability enhancement as secondary fillers in advanced package composites.

Defined carve-outY2Sn2O7

Defined carve-outBaZr(PO4)2

Barium zirconium phosphate (BaZr(PO4)2) non-luminescent high-permittivity dielectric

Un-activated rare-earth-free phosphate high-k dielectric with permittivity ~18.6, expressly distinct from rare-earth-activated phosphor hosts in the same material family.

Market $0.2-0.5Bsemiconductor passivesDetails →

Market $0.3Bpackage reliabilityDetails →

Barium molybdate and tungstate mid-permittivity additional filler for package reliability

BaMoO4, SrMoO4, CaMoO4, and BaWO4 scheelite-class particles at 5–20 vol% serve as mid-permittivity (dielectric constant ~10) reliability and thermal-mass additional fillers in advanced package composites.

Clear IP pathBaMoO4

Defined carve-outLu2Si2O7

Rare-earth silicate dielectrics (Lu/Y/La/Gd, ytterbium excluded) for MOS and RF use

Lu2Si2O7/Y/La/Gd silicate dielectric genus for non-EBC applications, claimed dependent and relaxation-converged pending DFT phonon confirmation; ytterbium silicates expressly excluded.

Market $0.2-0.5Bsemiconductor passivesDetails →

Clear IP pathZrSiO4 / HfSiO4

Hafnon, zircon, and berlinite refractory filler for dielectric isolation in packaging

HfSiO4, ZrSiO4, Y2Si2O7, and AlPO4 on-hull refractory phases provide chemical durability and dielectric isolation as secondary fillers in advanced package underfills and thermal interface composites.

Market $0.5Bpackage reliabilityDetails →

Defined carve-outNa2LiAlF6

Sodium-lithium hexafluoroaluminate (Na2LiAlF6) solid electrolyte for lithium batteries

Elpasolite fluoroaluminate claimed in narrow lithium-battery context — 2:1 Na:Li stoichiometry with lithium-metal anode — distinct from sodium-ion and aluminum-electrolysis prior art.

Market $0.2-0.5Bsolid-state lithium batteriesDetails →

Defined carve-outNiP2 / Ni2P

Nickel phosphide hydrogen-evolution method-of-use reference (comparative disclosure)

NiP2 and Ni2P are disclosed as method-of-use reference materials only; inter-model disagreement and surface restructuring rule them out as lead compositions.

green hydrogenDetails →

Defined carve-outNa2Al2B2O7

Sodium aluminoborate (Na2Al2B2O7) glass for EUV pellicle membranes

Alkali aluminoborate thin-film (<10 um) with predicted >80% EUV transmission at 13.5 nm, claimed in narrow film form as a non-silicon EUV pellicle alternative.

Market $0.2-0.5BEUV lithographyDetails →

Defined carve-outCoSb3 / Mg3Sb2 / SnTe

Skutterudite, Zintl, and tin-telluride backup thermoelectric compositions for segmented modules

CoSb3, Mg3Sb2, and SnTe provide complementary p-type and n-type thermoelectric legs for segmented or graded modules, with Seebeck coefficients up to 362 µV/K.

Market $0.5-1Bwaste-heat recoveryDetails →

Natural-ester transformer fluid uprating method with trifunctional antioxidant additive

Defensive method-of-use disclosure for thermally extending Kraft-paper transformer life using a natural-ester fluid and a single trifunctional antioxidant-passivator-scavenger conjugate.

Market $0.2-0.5Btransformer / dielectric fluidsDetails →

rad-hard packagingDetails →

Complex fluoride dielectrics with wide bandgap and mid-range permittivity for radiation-hard packaging layers

BaHfF6 and related complex fluorides uniquely combine ~7 eV bandgap with permittivity of 12–16 in a use-bound, non-superionic configuration capped under a hermetic oxide layer.

Defined carve-outBaHfF6

advanced packagingDetails →

Yttrium oxychloride reference composition demonstrating dielectric range of the aluminum oxychloride barrier platform

Crystalline YOCl (computed permittivity ~22.3, bandgap ~5.1 eV) serves as a genus-spanning reference showing the Al-Cl-O barrier family spans permittivity from 3.3 to 22.3, filed under packaging-barrier use only.

Defined carve-outYOCl

Market $1-5BbatteriesDetails →

Rubidium lanthanum fluoride solid electrolyte for fluoride-ion batteries

Heavy-alkali RbLaF4 and related fluorides provide enlarged ion channels and a computed fluoride migration barrier of 0.45 to 0.55 eV, addressing a key conductivity gap in fluoride-shuttle battery electrolytes.

Clear IP pathRbLaF4

Lithium and sodium aluminum fluoride wide-window solid electrolytes for high-voltage batteries

Li3AlF6, LiBF4, and related fluoride salts offer a computed electrochemical stability window up to 5.5 V versus lithium with reduced moisture sensitivity compared to thiophosphate electrolytes.

Clear IP pathLi3AlF6

Clear IP pathBaHfN2 / BaZnOS / K2HfO3

Extended hafnate variant dielectrics including barium hafnium nitride, barium zinc oxysulfide, and potassium hafnate

BaHfN2, BaZnOS, K2HfO3, and strontium Ruddlesden-Popper hafnates provide compositional breadth around the core hafnate high-k dielectric family for MIM capacitor and cathode-coating applications.

Market $1-5Bpower-electronics packagingDetails →

Beryllium carbon nitride wide-bandgap ceramic for thermal interface and radiation-hard substrates

Phonon-stable BeCN2 combines a high phonon energy scale and wide bandgap to complement MgSiN2 as a thermal-interface and radiation-hard dielectric substrate, with beryllium capped through sealed-substrate handling requirements.

Clear IP pathBeCN2

Clear IP pathCrP/phosphorene

Transition metal phosphide on black phosphorene heterostructure catalyst for hydrogen evolution

CrP, WP, or VP deposited on a 2D black-phosphorene support shifts the work function by at least 100 mV versus the bulk phosphide reference, targeting enhanced HER activity through the phosphide-phosphorene interface effect.

Market $1-5Bgreen hydrogenDetails →

CeCuSi heavy-fermion silicide for superconducting interconnect and cryogenic sensing device use

Phonon-validated CeCuSi claimed for device-use applications in superconducting interconnects and heavy-fermion sensing — not as a bare composition.

Licensing requiredCeCuSi

Claim-boundary comparative examples defining what each patent family does not cover

Eight documented negative controls — including carbon-supported CrP, undoped Ca2Fe2O5, nickel phosphides, bulk Cu2Se, undoped MgB2, and crystalline Al2O3 ALD — establish the outer limits of the portfolio claims.

Details →

AgAlS2 / AgAlSe2 / AgAlTe2

Silver aluminum chalcogenide polar absorber and nonlinear optical materials (computed stage)

AgAlS2, AgAlSe2, and AgAlTe2 are proposed as a bandgap-tunable polar chalcogenide absorber and nonlinear optical material series filling compositional whitespace adjacent to copper indium chalcogenide incumbents; experimental validation of stability and optical properties is required.

Market $0.5-1BphotovoltaicsDetails →

Defined carve-outCd4B6O13

Cadmium hexaborate (Cd4B6O13) candidate packaging dielectric — property validation pending

Computationally identified cadmium borate held as a genus-completion backup; dielectric properties and full stability validation not yet confirmed.

advanced semiconductor packaging (candidate)Details →

rad-hard packaging (candidate)Details →

Tin tetraborate borate dielectric backup material (development stage)

SnB4O7 is a phonon-validated tin-substituted tetraborate structurally analogous to the SrB4O7 dielectric lead, disclosed as a development-stage backup pending per-composition dielectric tensor and bandgap measurements.

Defined carve-outSnB4O7

Defined carve-outCa2B2SiO7

Calcium borosilicate (Ca2B2SiO7) candidate packaging dielectric — dielectric properties pending

Phonon-stable, supply-chain-clean calcium borosilicate backup member; dielectric permittivity and bandgap not yet computed and require experimental confirmation.

advanced semiconductor packaging (candidate)Details →

high-permittivity dielectricsDetails →

Gold-bearing auride high-permittivity dielectric genus (development stage)

A five-member gold-bearing Pmmn-structured dielectric genus, three members of which show computed permittivity of 13-15, represents an early-stage high-permittivity candidate with partial proof and an export-control consideration requiring due diligence.

(X)4(X)3Au

critical-minerals recoveryDetails →

Bipolar-membrane electrodialysis polishing step for antimony, arsenic, and bismuth separation — reserved filing

A sulfonated polyaromatic bipolar-membrane electrodialysis stack for downstream Sb/As/Bi polishing after thioglycolate leach; priority position preserved for a separate filing, not yet substantively claimed.

Market nichepackage reliability fallbackDetails →

Aluminum oxyhydroxide narrow-corridor reliability filler with bounded thermal conductivity claim

Boehmite-diaspore AlHO2 particles are claimed within a tight triple-bound corridor — requiring simultaneously high Slack and Cahill estimates and composite thermal conductivity — reflecting and honestly disclosing a 30-fold disagreement between computational thermal-conductivity sources.

Clear IP pathAlHO2

oxide dielectricsDetails →

Lanthanide oxide dielectric genus for advanced semiconductor applications (development stage)

A triclinic lanthanide oxide genus with 5 of 10 phonon-validated members is disclosed as a development-stage asset; dielectric permittivity data are pending first-principles computation before commercial claims can be substantiated.

O12(Ln)4(X)3

Unsubstituted barium lithium niobate TTB parent (excluded comparative example)

Ba8Li2Nb6O24 is the dynamically unstable parent phase expressly excluded from the lead-free piezoelectric claims; it serves as the boundary-defining comparative example that establishes the novelty of the tantalum-substituted and magnesium-stabilized leads.

Ba8Li2Nb6O24

Details →

Catalog of computationally excluded compositions supporting non-obviousness of disclosed TIM fillers

Approximately 70 surveyed compositions — including molybdenum, tungsten, and chromium diborides, beryllium nitride, and several mixed-anion phases — are documented as harmonically unstable or otherwise disqualified, establishing the deliberate and non-obvious selection of the disclosed filler families.

prosecution-defenseDetails →

Documented excluded compositions and phonon-instability controls for portfolio integrity

Adversarially screened exclusions (AlClO, Li3OCl, Yb-silicates, AlLaO3, and others) preserved as candor record demonstrating symmetric pass/fail screening across the full candidate set.